Patent US1346033A successfully refreshed from Google Patents.
Patent US5258647A successfully refreshed from Google Patents.
US5258647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electronic systems disposed in a high force environment
Assignee: Lockheed Martin Corp
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Filing: 1992-08-26
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Granted: 1993-11-02
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Expires: 2012-08-26
Abstract
Abstract A high acceleration object includes an electronic system which is operable at accelerations in excess of 20,000 g. Connections between integrated circuit chips and other portions of the electronic system are provided by metallization patterns disposed on polymer dielectric layers which are self-supporting across gaps between components. A high density interconnect structure is disposed within the cavity of a hermetically sealed package.
Inventors
- 👤 Robert J. Wojnarowski
- 👤 Charles W. Eichelberger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/121; H10W70/00; H10W70/099; H10W70/60; H10W70/611; H10W70/614; H10W70/67; H10W70/688; H10W70/68; H10W70/682; H10W72/00; H10W72/071; H10W72/0711; H10W72/07141; H10W72/50; H10W72/541; H10W72/5445; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
180 words
A high density interconnect structure comprising: a package base having a cavity therein including a recess in the bottom of the cavity in which a semiconductor chip having contact pads thereon is disposed, said package base including contact lands disposed on a shoulder within said cavity adjacent said recess, said contact pads and said contact lands being disposed in substantially a common plane; a polymer dielectric layer about 1-2 mils thick disposed on the exposed major surface of said semiconductor chip and on said contact lands and extending across any gap between said chip and said shoulder; a plurality of via holes in said dielectric layer disposed in alignment with selected ones of said contact pads of said semiconductor chip and said contact lands of said package; a plurality of conductors disposed on said polymer dielectric layer interconnecting selected ones of said chip contact pads and said package contact lands and extending into appropriate ones of said via holes to provide those connections; said polymer dielectric layer and said interconnecting conductor pattern being recessed within the cavity of said package.
Claim 2
Dependent Claim
180 words
A high density interconnect structure comprising: a package base having a cavity therein including a recess in the bottom of the cavity in which a semiconductor chip having contact pads thereon is disposed, said package base including contact lands disposed on a shoulder within said cavity adjacent said recess, said contact pads and said contact lands being disposed in substantially a common plane; a polymer dielectric layer about 1-2 mils thick disposed on the exposed major surface of said semiconductor chip and on said contact lands and extending across any gap between said chip and said shoulder; a plurality of via holes in said dielectric layer disposed in alignment with selected ones of said contact pads of said semiconductor chip and said contact lands of said package; a plurality of conductors disposed on said polymer dielectric layer interconnecting selected ones of said chip contact pads and said package contact lands and extending into appropriate ones of said via holes to provide those connections; said polymer dielectric layer and said interconnecting conductor pattern being recessed within the cavity of said package.
Claim 3
Dependent Claim
32 words
The structure recited in claim 1 further comprising a package lid bonded to said package base to hermetically enclose said semiconductor chip, said dielectric layer and said interconnecting conductors within said package.
Claim 4
Dependent Claim
38 words
The structure recited in claim 2 further comprising: a solid dielectric block between said semiconductor chip and said lid extending from said polymer dielectric layer and said conductors to said lid to at least partially support said lid.
Claim 5
Dependent Claim
28 words
The structure recited in claim 1 wherein: there is a gap between said chip and said shoulder; and said dielectric layer is unsupported where it spans said gap.
Claim 6
Dependent Claim
69 words
The structure recited in claim 4 wherein: the portions of said plurality of conductors which span said gap are about 0.1-0.5 miles thick whereby said dielectric layer is capable of supporting the portions of said conductors which span said gap while experiencing said unbalanced forces in excess of those induced by an acceleration of 20,000 g to prevent short circuit faults, open circuit faults and other unacceptable conductor degradation.
Claim 7
Dependent Claim
16 words
The structure recited in claim 1 wherein: said polymer dielectric layer has a substantially uniform thickness.
Claim 8
Dependent Claim
21 words
The high density interconnect structure recited in claim 1 wherein: said contact lands are integral with external conductors of said package.
Claim 9
Dependent Claim
27 words
The structure recited in claim 1 wherein: there is a gap between said chip and said shoulder; and which further comprises a dielectric material filling the gap.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-01 | 1997-05-03 | 1997-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-01 | 2001-05-03 | 2001-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-01 | 2005-05-03 | 2005-11-02 | $7700.00 | Window Closed / Lapsed |