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US5258266A
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US
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Method of forming minute patterns using positive chemically amplifying type resist
Assignee: Mitsubishi Electric Corp
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Filing: 1992-08-06
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Granted: 1993-11-02
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Expires: 2012-08-06
Abstract
Abstract A method of forming a minute pattern with controlled resist profile by using chemically amplifying type resist and deep UV ray is disclosed. A positive chemically amplifying type resist is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H + ions which are catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor generated in the resist film move vertically downward, so that diffusion of the H + ions in the lateral direction during heating can be prevented. Consequently, a positive minute pattern having sidewall formed vertical to the substrate can be provided.
Inventors
- 👤 Akira Tokui
- 👤 Masahiro Yoneda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:03
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/38; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
135 words
A method of forming a minute pattern using a positive chemically amplifying type resist, comprising the steps of: preparing a positive chemically amplifying type resist including a base resin, a dissolution inhibitor for inhibiting dissolution of the base resin in a developer, and a catalyst generating agent which generates a catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor upon irradiation with light; forming a resist film on a substrate by applying the positive chemically amplifying resist on the substrate and drying the same; selectively irradiating said resist film with light; after said irradiation, heating said resist film; after said irradiation, applying an electric field to said resist film; and developing the resist film to remove irradiated portions of the resist film, the developing step being effected subsequent to the electric field application.
Claim 2
Independent Claim
135 words
A method of forming a minute pattern using a positive chemically amplifying type resist, comprising the steps of: preparing a positive chemically amplifying type resist including a base resin, a dissolution inhibitor for inhibiting dissolution of the base resin in a developer, and a catalyst generating agent which generates a catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor upon irradiation with light; forming a resist film on a substrate by applying the positive chemically amplifying resist on the substrate and drying the same; selectively irradiating said resist film with light; after said irradiation, heating said resist film; after said irradiation, applying an electric field to said resist film; and developing the resist film to remove irradiated portions of the resist film, the developing step being effected subsequent to the electric field application.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein the substrate is a silicon substrate.
Claim 4
Dependent Claim
25 words
A method according to claim 1, wherein the direction of application of the electric field to said resist film is vertical to said resist film.
Claim 5
Dependent Claim
30 words
A method according to claim 1, wherein the step of heating the resist film and the step of applying an electric field to the resist film are carried out simultaneously.
Claim 6
Dependent Claim
23 words
A method according to claim 1, wherein said step of applying an electric field to the resist film is carried out in vacuum.
Claim 7
Dependent Claim
15 words
A method according to claim 1, wherein said light comprises a KrF excimer laser beam.
Claim 8
Dependent Claim
30 words
A method according to claim 1, wherein said step of applying an electric field to the resist film is carried out prior to the step of heating the resist film.
References Cited (Backward Citations)
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JPS633417A
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US4996123A
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JPS63288017A
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US5004667A
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US5158861A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-01 | 1997-05-03 | 1997-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-01 | 2001-05-03 | 2001-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-01 | 2005-05-03 | 2005-11-02 | $7700.00 | Window Closed / Lapsed |