US4996123A
Expired / Lapsed
US
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Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula
Assignee: Panasonic Holdings Corp
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Filing: 1989-02-24
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Granted: 1991-02-26
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Expires: 2009-02-24
Abstract
Abstract An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.
Inventors
- 👤 Noboru Nomura
- 👤 Atsushi Ueno
- 👤 Kazuhiko Hashimoto
- 👤 Satoshi Kinoshita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 03:59
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/008; G03F7/0085
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
148 words
A resist pattern forming method comprising the steps of: disposing an optically oriented photoresist layer on a substrate in such a manner that orientation of said photoresist layer is normal to a surface of said substrate, said optically oriented photoresist being composed of an organic polymer with a refractive index n p , an organic crystal with a refractive index n x , and a photosensitizer, wherein the relationship between said refractive indices n x and n p is expressed by the formula n x 2 -n p 2 >(NA o ) 2 for the numerical aperture NA o of a projection lens employed for photolithographic exposure; irradiating said surface of said photoresist layer with incident light through a photomask, whereby said incident light is propagated through said photoresist layer to the bottom of said layer without scattering; and developing said photoresist layer to form a resist pattern.
Claim 2
Dependent Claim
148 words
A resist pattern forming method comprising the steps of: disposing an optically oriented photoresist layer on a substrate in such a manner that orientation of said photoresist layer is normal to a surface of said substrate, said optically oriented photoresist being composed of an organic polymer with a refractive index n p , an organic crystal with a refractive index n x , and a photosensitizer, wherein the relationship between said refractive indices n x and n p is expressed by the formula n x 2 -n p 2 >(NA o ) 2 for the numerical aperture NA o of a projection lens employed for photolithographic exposure; irradiating said surface of said photoresist layer with incident light through a photomask, whereby said incident light is propagated through said photoresist layer to the bottom of said layer without scattering; and developing said photoresist layer to form a resist pattern.
Claim 3
Dependent Claim
16 words
The resist pattern forming method of claim 1, wherein said organic crystal is a liquid crystal.
Claim 4
Dependent Claim
32 words
The resist pattern forming method of claim 1, which further comprises the step of annealing said optically oriented photoresist after the step of disposing said optically oriented photoresist layer on said substrate.
Claim 5
Dependent Claim
24 words
The resist pattern forming method of claim 3, which further comprises the step of applying an electric or a magnetic field during said annealing.
Claim 6
Dependent Claim
150 words
A resist pattern forming method comprising the steps of: disposing an optically oriented photoresist layer on a substrate in such manner that orientation of said resist is normal to a surface of said substrate, said optically oriented photoresist being composed of a low molecular organic crystal with a refractive index n x , a high molecular organic crystal with a refractive index n p , and photosensitizer, wherein the relationship between said refractive indices n x and n p is expressed by a formula n x 2 -n p 2 >(NA o ) 2 for a numerical aperture NA o of a projection lens employed for photolithographic exposure; irradiating said surface of said oriented photoresist layer with incident light through a photomask, whereby said incident light is propagated through said photoresist layer to the bottom of said layer without scattering; and developing said photoresist layer to form a resist pattern.
Claim 7
Dependent Claim
150 words
A resist pattern forming method comprising the steps of: disposing an optically oriented photoresist layer on a substrate in such manner that orientation of said resist is normal to a surface of said substrate, said optically oriented photoresist being composed of a low molecular organic crystal with a refractive index n x , a high molecular organic crystal with a refractive index n p , and photosensitizer, wherein the relationship between said refractive indices n x and n p is expressed by a formula n x 2 -n p 2 >(NA o ) 2 for a numerical aperture NA o of a projection lens employed for photolithographic exposure; irradiating said surface of said oriented photoresist layer with incident light through a photomask, whereby said incident light is propagated through said photoresist layer to the bottom of said layer without scattering; and developing said photoresist layer to form a resist pattern.
Claim 8
Dependent Claim
32 words
The resist pattern forming method of claim 5, which further comprises the step of annealing said optically oriented photoresist after the step of disposing said optically oriented photoresist layer on said substrate.
Claim 9
Dependent Claim
24 words
The resist pattern forming method of claim 6, which further comprises the step of applying an electric or a magnetic field during said annealing.
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