Solidstate image sensor device

Claim 2

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; an electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along a surface of the semiconductor substrate receptive of the electromagnetic wave; and an aperture formed on a surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave so as to expose a part of a surface of the electrode which is not receptive of the electromagnetic wave and to connect the electrode to the surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave to effect an electrical connection with an external circuit.

Claim 3

A solid state image sensor according to claim 1, wherein a part of a surface of the electrode which is not receptive of the electromagnetic wave is connected to a bump electrode for connection to an external circuit through the bump electrode.

Claim 4

A solid state image sensor according to claim 1, further comprising an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive.

Claim 5

A solid state image sensor according to claim 3, wherein a part of the surface of the electrode which is not receptive of the electromagnetic wave is connected to a bump electrode for connection to an external circuit through the bump electrode.

Claim 6

A solid state image sensor according to claim 3, wherein the adhesive contains a fluorescent substance.

Claim 7

A solid state image sensor according to claim 3, wherein the adhesive is a fluorescent substance.

Claim 8

A solid state image sensor according to claim 3, further comprising a film made of a fluorescent substance interposed between the second substrate and the adhesive.

Claim 9

A solid state image sensor according to claim 3, wherein the second substrate has a lens located in a position corresponding to a position of the photo-sensor.

Claim 10

A solid state image sensor according to claim 3, wherein the second substrate has an optical fiber located in a position corresponding to a position of the photo-sensor.

Claim 11

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; and a connection electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically coupled with a part of the first electrode through the semiconductor substrate, and the connection electrode being connected to a bump electrode for connection to an external circuit through the bump electrode.

Claim 12

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; and a connection electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically coupled with a part of the first electrode through the semiconductor substrate, and the connection electrode being connected to a bump electrode for connection to an external circuit through the bump electrode.

Claim 13

A solid state image sensor according to claim 10, further comprising an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive.

Claim 14

A solid state image sensor according to claim 11, wherein the adhesive contains a fluorescent substance.

Claim 15

A solid state image sensor according to claim 11, wherein the adhesive is a fluorescent substance.

Claim 16

A solid state image sensor according to claim 11, further comprising a film made of a fluorescent substance interposed between the second substrate and the adhesive.

Claim 17

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a connection electrode formed on a surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the first electrode through the semiconductor substrate; an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive, the second substrate having a lens located in a position corresponding to a position of the photo-sensor.

Claim 18

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a connection electrode formed on a surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the first electrode through the semiconductor substrate; an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive, the second substrate having a lens located in a position corresponding to a position of the photo-sensor.

Claim 19

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a connection electrode formed on a surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the first electrode through the semiconductor substrate; an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive, the second substrate having an optical fiber located in a position corresponding to a position of the photo-sensor.

Claim 20

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a connection electrode formed on a surface which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the first electrode through the semiconductor substrate; an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive, the second substrate having an optical fiber located in a position corresponding to a position of the photo-sensor.

Claim 21

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a first circuit formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the first circuit being electrically connected to the first electrode; a second electrode formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second electrode being electrically connected to the first circuit and coupled with the first electrode through the first circuit; a second circuit formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second circuit being electrically connected to the second electrode; a third electrode formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the third electrode being electrically connected to the second circuit and coupled with the second electrode through the second circuit; and a connection electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically coupled with a part of the third electrode through the semiconductor substrate.

Claim 22

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a first circuit formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the first circuit being electrically connected to the first electrode; a second electrode formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second electrode being electrically connected to the first circuit and coupled with the first electrode through the first circuit; a second circuit formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second circuit being electrically connected to the second electrode; a third electrode formed on the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the third electrode being electrically connected to the second circuit and coupled with the second electrode through the second circuit; and a connection electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically coupled with a part of the third electrode through the semiconductor substrate.

Claim 23

A solid state image sensor according to claim 17, wherein the connection electrode is connected to a bump electrode for connecting to an external circuit through the bump electrode.

Claim 24

A solid state image sensor according to claim 17, further comprising an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive.

Claim 25

A solid state image sensor according to claim 19, wherein the connection electrode is connected to a bump electrode for connecting to an external circuit through the bump electrode.

Claim 26

A solid state image sensor according to claim 17, wherein the adhesive contains a fluorescent substance.

Claim 27

A solid state image sensor according to claim 17, wherein the adhesive is a fluorescent substance.

Claim 28

A solid state image sensor according to claim 17, further comprising a film made of a fluorescent substance interposed between the second substrate and the adhesive.

Claim 29

A solid state image sensor according to claim 17, wherein the second substrate has a lens located in a position corresponding to a position of the photo-sensor.

Claim 30

A solid state image sensor according to claim 17, wherein the second substrate has an optical fiber located in a position corresponding to a position of the photo-sensor.

Claim 31

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a second electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second electrode being electrically coupled with a part of the first electrode through the semiconductor substrate; a first circuit formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the first circuit being electrically connected to the second electrode; a third electrode formed on the surface of the semiconductor substrate which is opposite to the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the third electrode being electrically connected to the first circuit and coupled with the second electrode through the first circuit; a second circuit formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second circuit being electrically connected to the third electrode; a fourth electrode formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the fourth electrode being electrically connected to the second circuit and coupled with the third electrode through the second circuit; and a connection electrode formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the fourth electrode.

Claim 32

A solid state image sensor device comprising: a semiconductor substrate; a photo-sensor formed on a surface of the semiconductor substrate receptive of an electromagnetic wave irradiated from outside of the device; a first electrode formed on a surface of the photo-sensor receptive of the electromagnetic wave and extending along the surface of the semiconductor substrate receptive of the electromagnetic wave; a second electrode formed on a surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second electrode being electrically coupled with a part of the first electrode through the semiconductor substrate; a first circuit formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the first circuit being electrically connected to the second electrode; a third electrode formed on the surface of the semiconductor substrate which is opposite to the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the third electrode being electrically connected to the first circuit and coupled with the second electrode through the first circuit; a second circuit formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the second circuit being electrically connected to the third electrode; a fourth electrode formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave irradiated from the outside of the device, the fourth electrode being electrically connected to the second circuit and coupled with the third electrode through the second circuit; and a connection electrode formed on the surface of the semiconductor substrate which is opposite to the surface of the semiconductor substrate receptive of the electromagnetic wave, the connection electrode being electrically connected to a part of the fourth electrode.

Claim 33

A solid state image sensor according to claim 26, wherein the connection electrode is connected to a bump electrode for connecting to an external circuit through the bump electrode.

Claim 34

A solid state image sensor according to claim 26, further comprising an adhesive disposed above the surface of the semiconductor substrate receptive of the electromagnetic wave; and a second substrate disposed on the adhesive and bonded to the semiconductor substrate by the adhesive.

Claim 35

A solid state image sensor according to claim 28, wherein the connection electrode is connected to a bump electrode for connecting to an external circuit through the bump electrode.

Claim 36

A solid state image sensor according to claim 26, wherein the adhesive contains a fluorescent substance.

Claim 37

A solid state image sensor according to claim 26, wherein the adhesive is a fluorescent substance.

Claim 38

A solid state image sensor according to claim 26, further comprising a film made of a fluorescent substance interposed between the second substrate and the adhesive.

Claim 39

A solid state image sensor according to claim 26, wherein the second substrate has a lens located in a position corresponding to a position of the photo-sensor.

Claim 40

A solid state image sensor according to claim 26, wherein the second substrate has an optical fiber located in a position corresponding to a position of the photo-sensor.