Process for the production of thin film transistors

Claim 1

Process for the production of a thin film transistor comprising: a) depositing on an electrically insulating substrate (1) a layer (2) of a first conductive material, b) producing photosensitive resin patterns (3) on the layer of the first conductive material defining the patterns to be etched in said layer, c) eliminating the areas of the first conductive material layer not covered with resin, d) depositing an amorphous hydrogenated carbon layer (6) on the structure obtained in c), e) dissolving the resin patterns in order to eliminate the amorphous carbon deposited on the resin, f) depositing a layer (8) of a semiconductor on the structure obtained in e), g) depositing a layer (9) of a first electrical insulant on the semiconductor layer, h) depositing a layer (10) of a second conductive material on the layer of the first insulant, i) photoengraving the stack of layers of the second conductive material, the first electrical insulant and the semiconductor in order to fix the dimensions of the transistor and j) passivating the structure obtained in i) with a second electrical insulant (12).