Thin film transistor with an amorphous carbon light protection and method to make this light protection

Abstract

Abstract Thin-film transistors such as those used for actively addressing liquid-crystal devices in large display screens have to be protected against incident light. Hitherto metal films which were electrically separated from the semiconductor material by an insulating layer have been used as light protection. The thin-film transistor described here is protected against incident light by means of a film of amorphous carbon. Amorphous carbon is electrically nonconducting and has an absorption of 99.96%. The carbon film is applied by means of the CVD process, methane being used as carbon source. <IMAGE>

Inventors

• 👤 Gilbert Dipl.-Phys. Mörsch

Bibliographic Details