Integrated delay line

Claim 2

A delay line, comprising: (a) a calibration sequence of N delay cells, C 1 , C 2 . . . C N ; (b) a second sequence of N delay cells, S 1 , S 2 . . . S N , with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is any number greater than zero; (c) a sequence of N latches, L 1 , L 2 . . . L N , wherein each of said latches L j has inputs coupled to outputs of C j for some j; and (d) logic circuitry with inputs both from said sequence of N latches and from outputs of N delay cells of said sequence and with an output indicating when said outputs of N delay cells of said second sequence correlate to said outputs of N delay cells of said calibration sequence.

Claim 3

The delay line of claim 1, wherein: (a) said N delays cells of both said calibration sequence and said second sequence consist essentially of inverters.

Claim 4

A delay line comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is any number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; (d) a plurality of two-input NAND gates feeding a multi-input NAND gate, each of said two-input NAND gates with one input from a latch storing the output of a cell of said calibration sequence and the other input from a corresponding cell in said second sequence; (e) whereby an input low-to-high transition propagating through the cells of said second sequence will generate a low-to-high transition in said multi-input NAND gate when said input transition reaches the first of said two-input NAND gates with a high input from its corresponding latch.

Claim 5

A delay line comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is any number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; (d) a plurality of two-input NAND gates feeding a multi-input NAND gate, each of said two-input NAND gates with one input from a latch storing the output of a cell of said calibration sequence and the other input from a corresponding cell in said second sequence; (e) whereby an input low-to-high transition propagating through the cells of said second sequence will generate a low-to-high transition in said multi-input NAND gate when said input transition reaches the first of said two-input NAND gates with a high input from its corresponding latch.

Claim 6

The delay line of claim 3, wherein: (a) said calibration sequence includes N cells, C 1 , C 2 . . . C N ; (b) said second sequence includes N cells, S 1 S 2 , . . . S N ; (c) each of said two-input NAND gates has inputs derived from a pair C j and S j for some j.

Claim 7

The delay line of claim 4, wherein: (a) each of said cells C j provides a delay of t nanoseconds; and (b) each of said cells S j provides a delay of λt nanoseconds; (c) whereby if a high-to-low transition propagates for a time T nanoseconds (independent of the value of t) through said calibration sequence and then the cell outputs are latched, with k equal to the integral part of T/t, the latched output of said cell C k-1 will be low and the latched output of cell C k will be high, and the two-input NAND gate with inputs derived from cells C k and S k will first have two high inputs when a low-to-high transition propagates through cells S l , . . . S k which will take a time about equal to λT independent of t.

Claim 8

The delay line of claim 5, wherein: (a) said t is in the range of t min to t max ; and (b) said N is an integral approximation of T/t min .

Claim 9

The delay line of claim 6, wherein: (a) said plurality of said calibration cells is contained in the set of cells C i , C i+1 , . . . C N where i equals the integral part of T/t max .

Claim 10

An integrated circuit including a delay line, comprising: (a) a calibration circuit; (b) a sequence of N delay cells, S 1 , S 2 . . . S N , wherein outputs of said delay cells S 1 . . . S N-1 are connected to inputs of said delay cells S 2 . . . S N , respectively; and (c) circuitry connected to outputs of said delay cells S 1 , S 2 . . . S N and to said calibration circuit, said circuitry indicating when a signal propagating through said sequence has passed through k of said cells (k less than or equal to N) where said calibration circuit determines k.

Claim 11

An integrated circuit including a delay line, comprising: (a) a calibration circuit; (b) a sequence of N delay cells, S 1 , S 2 . . . S N , wherein outputs of said delay cells S 1 . . . S N-1 are connected to inputs of said delay cells S 2 . . . S N , respectively; and (c) circuitry connected to outputs of said delay cells S 1 , S 2 . . . S N and to said calibration circuit, said circuitry indicating when a signal propagating through said sequence has passed through k of said cells (k less than or equal to N) where said calibration circuit determines k.

Claim 12

The delay line of claim 8, wherein: (a) said calibration circuit includes a ring oscillator and counter; and (b) said circuitry includes a multiplexer.

Claim 13

The delay line of claim 8, wherein: (a) said calibration circuit includes a calibration sequence of delay cells; and (b) an input for an external fixed time duration pulse; (c) whereby said k is determined by how many of said delay cells of said calibration sequence said pulse simultaneously traverses.

Claim 14

The delay line of claim 8, further comprising: (a) said sequence of N delay cells connected to second circuitry to thereby allow said sequence to act as a second sequence; and (b) said second circuitry indicating when a signal propagating through said second sequence has passed through k of said cells of said second sequence.

Claim 17

A delay line comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is any number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; and (d) logic circuitry with inputs from said latch circuitry and from outputs of cells of said second sequence and with an output indicating when the outputs of cells of said second sequence correlate to said stored outputs of cells of said calibration sequence; (e) wherein one of said cells of said calibration sequence provides a delay suffering from that provided by a second of said cells of said calibration sequence.

Claim 18

A delay line comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is any number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; and (d) logic circuitry with inputs from said latch circuitry and from outputs of cells of said second sequence and with an output indicating when the outputs of cells of said second sequence correlate to said stored outputs of cells of said calibration sequence; (e) wherein one of said cells of said calibration sequence provides a delay suffering from that provided by a second of said cells of said calibration sequence.

Claim 19

A delay line, comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is a number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; (d) logic circuitry with inputs both from said latch circuitry and from outputs of cells of said second sequence and with an output indicating when the outputs of cells of said second sequence correlate to said stored outputs of cells of said calibration sequence; and (e) said latch circuitry includes XOR gates with the inputs of each of said XOR gates coupled to the latched output and the output of one of said cells of said calibration sequence.

Claim 20

A delay line, comprising: (a) a calibration sequence of delay cells; (b) a second sequence of delay cells with the delay of each of said cells of said second sequence equal to about λ times the delay of the corresponding cell of said calibration sequence, where λ is a number greater than zero; (c) latch circuitry which stores information of the outputs of a plurality of cells of said calibration sequence; (d) logic circuitry with inputs both from said latch circuitry and from outputs of cells of said second sequence and with an output indicating when the outputs of cells of said second sequence correlate to said stored outputs of cells of said calibration sequence; and (e) said latch circuitry includes XOR gates with the inputs of each of said XOR gates coupled to the latched output and the output of one of said cells of said calibration sequence.