US5242501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Susceptor in chemical vapor deposition reactors
Assignee: Lam Research Corp
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Filing: 1989-07-07
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Granted: 1993-09-07
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Expires: 2009-07-07
Abstract
Abstract An improved chemical reactor of the type for depositing a layer of material epitaxially onto a wafer of single crystalline silicon is disclosed. The reactor has a susceptor for supporting each wafer in a cavity of the susceptor with the cavity being curvilinearly shaped. Cavities of a particular shape and dimensions is particularly effective in reducing dislocations in the deposited epitaxial layer.
Inventors
- 👤 James McDiarmid
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:41
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
71 words
A susceptor for an epitaxial, chemical vapor deposition said susceptor having at least one circularly shaped cavity in a surface thereof to receive a semiconductor wafer, said cavity having a planar bottom portion, side walls perpendicular to said susceptor surface, and a curved side surface between said bottom portion and said side wall, said side surface having a radius of curvature of 225 inches measured from a point above said susceptor.
Claim 2
Dependent Claim
71 words
A susceptor for an epitaxial, chemical vapor deposition said susceptor having at least one circularly shaped cavity in a surface thereof to receive a semiconductor wafer, said cavity having a planar bottom portion, side walls perpendicular to said susceptor surface, and a curved side surface between said bottom portion and said side wall, said side surface having a radius of curvature of 225 inches measured from a point above said susceptor.
Claim 3
Dependent Claim
83 words
A susceptor for an epitaxial, chemical vapor deposition reactor, said susceptor having at least one circularly shaped cavity in a surface thereof to receive a semiconductor wafer, said cavity comprising: a side wall forming a right cylinder in said susceptor surface; a curved side surface portion contacting said side walls, said curved side surface portion having a radius of curvature of 225 inches measured from a point above said susceptor; and a planar bottom portion contacted and surrounded by said side surface portion.
Claim 4
Dependent Claim
83 words
A susceptor for an epitaxial, chemical vapor deposition reactor, said susceptor having at least one circularly shaped cavity in a surface thereof to receive a semiconductor wafer, said cavity comprising: a side wall forming a right cylinder in said susceptor surface; a curved side surface portion contacting said side walls, said curved side surface portion having a radius of curvature of 225 inches measured from a point above said susceptor; and a planar bottom portion contacted and surrounded by said side surface portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-06 | 1997-03-08 | 1997-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-06 | 2001-03-08 | 2001-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-06 | 2005-03-08 | 2005-09-07 | $7700.00 | Window Closed / Lapsed |