US5234537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching method and its application
Assignee: Shimadzu Corp
•
Filing: 1992-03-20
•
Granted: 1993-08-10
•
Expires: 2012-03-20
Abstract
Abstract A dry etching method for etching a surface of a substrate with plasma of mixed gas including i) gas that is reactive to the material of the substrate, and ii) inert gas. Accumulation of reaction products between the substrate and the reactive gas ions on the substrate is effectively eliminated by the ions of the inert gas plasma. Accordingly the etching rate of the substrate is not lowered. Silicon carbide (SiC) is one of the most suitable object of the plasma etching of the present invention, since it is hard to engrave by conventional dry etching methods.
Inventors
- 👤 Tetsuya Nagano
- 👤 Masaru Koeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:07
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/124; C; C03; C03C; C03C15/00; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; G02B5/00; G02B5/18; G02B5/1847; G02B5/1857; H; H10; H10P; H10P50/00
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
46 words
A plasma etching method comprising the steps of: etching a surface of silicon carbide (SiC) with a plasma of a source gas; and using a mixture of gases as the plasma of the source gas, the source gas comprising a mixture of CHF 3 and argon.
Claim 2
Dependent Claim
46 words
A plasma etching method comprising the steps of: etching a surface of silicon carbide (SiC) with a plasma of a source gas; and using a mixture of gases as the plasma of the source gas, the source gas comprising a mixture of CHF 3 and argon.
Claim 3
Dependent Claim
20 words
The plasma etching method according to claim 1, where the ratio of the mixture is CHF 3 :Ar=50:50 to 10:90.
Claim 4
Dependent Claim
44 words
A plasma etching method comprising the steps of: etching a surface of glass with a plasma of a source gas; and using a mixture of gases as the plasma of the source gas, the source gas comprising a mixture of CF 4 and argon.
Claim 5
Dependent Claim
44 words
A plasma etching method comprising the steps of: etching a surface of glass with a plasma of a source gas; and using a mixture of gases as the plasma of the source gas, the source gas comprising a mixture of CF 4 and argon.
Claim 6
Dependent Claim
20 words
The plasma etching method according to claim 3, where the ratio of the mixture is CF 4 :Ar=55:45 to 10:90.
Claim 7
Independent Claim
57 words
A method for producing a diffraction grating comprising the steps of: a) covering a substrate plate with a resist layer having a grating aperture pattern; and b) etching the substrate with a plasma using a source gas of a mixture of i) gas that is reactive to the material of the substrate plate, and ii) inert gas.
Claim 8
Independent Claim
57 words
A method for producing a diffraction grating comprising the steps of: a) covering a substrate plate with a resist layer having a grating aperture pattern; and b) etching the substrate with a plasma using a source gas of a mixture of i) gas that is reactive to the material of the substrate plate, and ii) inert gas.
Claim 9
Dependent Claim
20 words
The diffraction grating producing method according to claim 5, where the material of the substrate plate is silicon carbide (SiC).
Claim 10
Dependent Claim
26 words
The diffraction grating producing method according to claim 6, where the gas that is reactive to SiC is CHF 3 and the inert gas is argon.
Claim 11
Dependent Claim
21 words
The diffraction grating producing method according to claim 7, where the ratio of the mixture is CHF 3 :Ar=50:50 to 10:90.
Claim 12
Dependent Claim
17 words
The diffraction grating producing method according to claim 5, where the material of the substrate is glass.
Claim 13
Dependent Claim
26 words
The diffraction grating producing method according to claim 9, where the gas that is reactive to glass is CF 4 and the inert gas is argon.
Claim 14
Dependent Claim
21 words
The diffraction grating producing method according to claim 10, where the ratio of the mixture is CF 4 :Ar=55.45 to 10:90.
Claim 15
Dependent Claim
28 words
The diffraction grating producing method according to claim 5, where the plasma is irradiated oblique to the surface of the substrate plate and perpendicular to the grating lines.
Claim 16
Dependent Claim
55 words
A diffraction grating of silicon carbide (SiC) produced by the steps of: a) covering an SiC substrate plate with a resist layer having a grating aperture pattern; and b) etching the SiC substrate with a plasma using a source gas of a mixture of i) gas that is reactive to SiC, and ii) inert gas.
Claim 17
Dependent Claim
55 words
A diffraction grating of silicon carbide (SiC) produced by the steps of: a) covering an SiC substrate plate with a resist layer having a grating aperture pattern; and b) etching the SiC substrate with a plasma using a source gas of a mixture of i) gas that is reactive to SiC, and ii) inert gas.
References Cited (Backward Citations)
US4131506A
Cited
US4124473A
Cited
DE3615519A1
Cited
US4865685A
Cited
US4981551A
Cited
US5005075A
Cited
EP0386518A1
Cited
EP0428390A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |