Patent US1437009A successfully refreshed from Google Patents.
US4124473A
Expired / Lapsed
US
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Fabrication of multi-level relief patterns in a substrate
Assignee: RCA Corp
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Filing: 1977-06-17
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Granted: 1978-11-07
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Expires: 1997-06-17
Abstract
Abstract Superposed multi-level diffraction gratings in photoresist can be etched into a substrate by using the photoresist as a masking pattern and by sputtering in a reactive fluoromethane plasma to a predetermined depth.
Inventors
- 👤 Hans W. Lehmann
- 👤 Roland W. Widmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:04
CPC Classifications
G; G02; G02B; G02B5/00; G02B5/18; G02B5/1842; G03; G03F; G03F7/00; G03F7/0035; G03F7/004; G03F7/022; G03F7/023; G03F7/26
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
182 words
In the method of making a multi-level straight walled square wave diffration grating having a periodicity of less than 5 microns on the surface of a substrate which comprises: coating said substrate with a photoresist, exposing said photoresist through a mask and developing said photoresist so as to provide a first surface relief pattern, etching said pattern into said substrate to a first depth corresponding to a predetermined primary color, recoating said etched substrate with photoresist, exposing said photoresist through a mask and developing said photoresist so as to provide a superposed second surface relief pattern, and etching said pattern into said substrate to a second depth corresponding to another predetermined primary color, the improvement which comprises carrying out said etching steps by sputter etching at a rate of about 200-400 angstroms per minute in the presence of a reactive gas at a pressure of from 2-20 millitorr, which gas has the formula CX n F 4-n wherein X is hydrogen or chlorine and n is an integer from 0-4 which forms volatile byproducts with the sputtered material and removing said byproducts.
Claim 2
Dependent Claim
182 words
In the method of making a multi-level straight walled square wave diffration grating having a periodicity of less than 5 microns on the surface of a substrate which comprises: coating said substrate with a photoresist, exposing said photoresist through a mask and developing said photoresist so as to provide a first surface relief pattern, etching said pattern into said substrate to a first depth corresponding to a predetermined primary color, recoating said etched substrate with photoresist, exposing said photoresist through a mask and developing said photoresist so as to provide a superposed second surface relief pattern, and etching said pattern into said substrate to a second depth corresponding to another predetermined primary color, the improvement which comprises carrying out said etching steps by sputter etching at a rate of about 200-400 angstroms per minute in the presence of a reactive gas at a pressure of from 2-20 millitorr, which gas has the formula CX n F 4-n wherein X is hydrogen or chlorine and n is an integer from 0-4 which forms volatile byproducts with the sputtered material and removing said byproducts.
Claim 3
Dependent Claim
22 words
A method according to claim 1 wherein the rate of etching is about the same for said photoresist and for said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-06 | 1982-05-08 | 1982-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-06 | 1986-05-08 | 1986-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-06 | 1990-05-08 | 1990-11-07 | $7700.00 | Window Closed / Lapsed |