US5231077A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Active device having an oxide superconductor and a fabrication process thereof
Assignee: Sharp Corp
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Filing: 1991-08-08
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Granted: 1993-07-27
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Expires: 2011-08-08
Abstract
Abstract A method for fabricating an active device comprises the steps of injecting particles into a single crystal substrate of a semiconductor material at a predetermined depth from the surface, annealing the substrate that contains the particles to form an insulator layer within the substrate, generally in correspondence to the predetermined depth, the step of annealing including a step of forming a single crystal semiconductor layer of a semiconductor material identical in composition with the substrate, on the insulator layer that is formed by the annealing, starting a deposition of a layer of an oxide superconductor on the semiconductor layer, growing the oxide superconductor layer while maintaining an epitaxial relationship with respect to the substrate; and converting the semiconductor layer to an oxide layer simultaneously to the growth of the oxide superconductor layer.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:30
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; H10N60/0436; H10N60/0604; H10N60/0661; H10N60/0912; H10N60/80; H10N60/85; H10N60/855; H10N60/857; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/703; Y10S505/725; Y10S505/729; Y10S505/73; Y10S505/732
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
133 words
A method for fabricating an active device, comprising the steps of: injecting particles into a surface of a single crystal substrate of a semiconductor material; annealing the substrate that contains the particles to form an amorphous oxide insulator layer within the substrate, generally in correspondence to a depth of said injected particles, said step of annealing including a step of forming a single crystal semiconductor layer of a semiconductor material identical in composition and crystal orientation with the semiconductor material of the substrate, on the amorphous oxide insulator layer that is formed by the annealing; growing the oxide super conductor layer on said semiconductor layer while maintaining an epitaxial relationship with respect to the substrate; and converting the semiconductor layer to an oxide layer simultaneously to the growth of the oxide superconductor layer.
Claim 2
Independent Claim
133 words
A method for fabricating an active device, comprising the steps of: injecting particles into a surface of a single crystal substrate of a semiconductor material; annealing the substrate that contains the particles to form an amorphous oxide insulator layer within the substrate, generally in correspondence to a depth of said injected particles, said step of annealing including a step of forming a single crystal semiconductor layer of a semiconductor material identical in composition and crystal orientation with the semiconductor material of the substrate, on the amorphous oxide insulator layer that is formed by the annealing; growing the oxide super conductor layer on said semiconductor layer while maintaining an epitaxial relationship with respect to the substrate; and converting the semiconductor layer to an oxide layer simultaneously to the growth of the oxide superconductor layer.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1 in which said substrate comprises silicon and said particle comprises oxygen.
Claim 4
Dependent Claim
19 words
A method as claimed in claim 1 in which said insulator layer has a thickness of about 0.3 μm.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1 in which said semiconductor layer has a thickness of about 0.2 μm.
Claim 6
Dependent Claim
27 words
A method as claimed in claim 1 in which said steps of deposition and growth of the oxide superconductor layer are achieved in an oxygen plasma environment.
Claim 7
Dependent Claim
33 words
A method as claimed in claim 5 in which said steps of deposition and growth of the oxide superconductor layer comprise simultaneous deposition of yttrium, barium and copper in the oxygen plasma environment.
Claim 8
Dependent Claim
32 words
A method as claimed in claim 6 in which said oxide superconductor layer formed by the steps of deposition and growth has a composition of YBa 2 Cu 3 O 7-x .
Claim 9
Dependent Claim
26 words
A method as claimed in claim 1 further comprising the step of patterning the oxide superconductor layer to form an active device on the oxide layer.
Claim 10
Dependent Claim
16 words
A method as claimed in claim 8 in which said active device comprises a Josephson device.
Claim 11
Dependent Claim
18 words
A method as claimed in claim 8 in which said step of patterning comprises an ion milling process.
References Cited (Backward Citations)
EP0269349A2
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US5017551A
Cited
EP0294285A1
Cited
JPH0244781A
Cited
US5047390A
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US4970395A
Cited
JPH02212306A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |