EP0269349A2
Expired / Lapsed
EP
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Method of making an article comprising a buried SiO2 layer
Assignee: AT&T Inc
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Filing: 1987-11-17
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Granted: —
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Expires: 2007-11-17
Abstract
Abstract A high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature <350°C) into a (100) Si wafer, a low temperature (500-700°C) anneal, a high temperature (>1200°C) anneal, a randomizing implant (∼ 5x10¹⁴Si/cm², nominal wafer temperature <100°C), and a low temperature anneal (nominal wafer temperature between 500 and 700°C). The resulting buried SiO₂ layer typically is relatively thin (e.g., 60 nm), stoichiometric, continuous, and essentially free of Si inclusions, and the Si overlayer typically is of device quality and essentially free of twins, with χ min ∼3%.
Inventors
- 👤 Kenneth Thomas Short
- 👤 Alice Elizabeth White
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 11:58
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
136 words
Method of making an article comprising a layer of SiO₂ buried within a Si body, the method comprising a) providing a single crystal Si body having a major surface and a crystal orientation; b) implanting oxygen ions into the Si body through the major surface such that a buried oxygen-rich layer is formed in the Si body, with a Si overlayer thereon; c) heat treating the oxygen-implanted Si body such that the buried SiO₂ layer is formed from the oxygen-rich layer; d) completing making the article; CHARACTERIZED IN THAT e) the oxygen implant is a subcritical oxygen implant; and the method further comprises f) carrying out, subsequent to b), a randomizing implant and a heat treatment such that the resulting Si overlayer is a device-grade overlayer having a relatively low defect density near the SiO₂/overlayer interface.
Claim 2
Dependent Claim
136 words
Method of making an article comprising a layer of SiO₂ buried within a Si body, the method comprising a) providing a single crystal Si body having a major surface and a crystal orientation; b) implanting oxygen ions into the Si body through the major surface such that a buried oxygen-rich layer is formed in the Si body, with a Si overlayer thereon; c) heat treating the oxygen-implanted Si body such that the buried SiO₂ layer is formed from the oxygen-rich layer; d) completing making the article; CHARACTERIZED IN THAT e) the oxygen implant is a subcritical oxygen implant; and the method further comprises f) carrying out, subsequent to b), a randomizing implant and a heat treatment such that the resulting Si overlayer is a device-grade overlayer having a relatively low defect density near the SiO₂/overlayer interface.
Claim 3
Dependent Claim
32 words
Method of claim 1, wherein the randomizing implant comprises implantation of Si ions, and wherein the Si body is maintained at a nominal temperature less than about 100°C during the randomizing implant.
Claim 4
Dependent Claim
37 words
Method of claim 2, wherein from about 2x10¹⁴ to about 1x10¹⁵ Si/cm² are implanted during the randomizing implant, and wherein the Si ions have an energy in the range from about 0.1 MeV to about 2 MeV.
Claim 5
Dependent Claim
53 words
Method of claim 1, wherein the Si body is maintained at a nominal temperature less than about 350°C during the subcritical oxygen implant, and wherein the randomizing implant is carried out subsequent to step c), with the Si body being maintained at a nominal temperature less than about 100°C during the randomizing implant.
Claim 6
Dependent Claim
49 words
Method of claim 4, wherein step c) comprises annealing the Si body at a temperature greater than about 1200°C and wherein the heat treatment of step f) comprises annealing the Si body at a temperature in the range from about 500 to about 700°C subsequent to the randomizing implant.
Claim 7
Dependent Claim
24 words
Method of claim 5, wherein step c) further comprises annealing the Si body at a temperature in the range from about 500 to 700°C.
Claim 8
Dependent Claim
56 words
Method of claim 1, wherein the Si body is maintained at a nominal temperature of at least about 350°C during the substoichiometric oxygen implant, and wherein a first randomizing implant is carried out prior to step c), with the Si body being maintained at a nominal temperature less than about 100°C during the first randomizing implant.
Claim 9
Dependent Claim
19 words
Method of claim 7, wherein step c) comprises annealing the Si body at a temperature greater than about 1200°C.
Claim 10
Dependent Claim
44 words
Method of claim 8, wherein the method further comprises a second randomizing implant, carried out subsequent to step c), the second randomizing implant being followed by an anneal of the Si body at a temperature in the range from about 500 to about 700°C.
Claim 11
Dependent Claim
25 words
Method of claim 8, wherein step c) further comprises annealing the Si body at a temperature in the range from about 500 to about 700°C.
Claim 12
Dependent Claim
27 words
Method of claim 1, wherein step c) comprises contacting the Si body with an atmosphere adapted for causing the slow growth of a relatively thin SiO₂ layer.
Claim 13
Dependent Claim
20 words
Method of claim 11, wherein the atmosphere comprises inert gas as a major component and oxygen as a minor component.
References Cited (Backward Citations)
No citation records indexed.
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