Patent FR2539983A1 successfully refreshed from Google Patents.
US5227655A
Expired / Lapsed
US
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Field effect transistor capable of easily adjusting switching speed thereof
Assignee: Renesas Electronics Corp
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Filing: 1991-02-15
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Granted: 1993-07-13
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Expires: 2011-02-15
Abstract
Abstract Herein disclosed is a vertical-type field effect transistor having a parallel connection of a diode and a resistor between the gate bonding pad and the gate electrode of the transistor to adjust the switching speed of the transistor without changing the other properties of the transistor.
Inventors
- 👤 Chizuru Kayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:35
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D84/143; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D88/00; H10W; H10W72/00; H10W72/90; H10W72/921; H10W72/926
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
169 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a drain electrode electrically connected to said drain region; a gate bonding pad formed on said semiconductor substrate; a resistor formed on said semiconductor substrate, said resistor having a first end and a second end opposite to said first end; and a diode formed on said semiconductor substrate, said diode having a first end and a second end opposite to said first end, said first end of said diode and said first end of said resistor being connected to said gate electrode and said second end of said diode and said second end of said resistor being connected to said gate bonding pad in order to form said diode and said resistor in a parallel connection.
Claim 2
Dependent Claim
169 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a drain electrode electrically connected to said drain region; a gate bonding pad formed on said semiconductor substrate; a resistor formed on said semiconductor substrate, said resistor having a first end and a second end opposite to said first end; and a diode formed on said semiconductor substrate, said diode having a first end and a second end opposite to said first end, said first end of said diode and said first end of said resistor being connected to said gate electrode and said second end of said diode and said second end of said resistor being connected to said gate bonding pad in order to form said diode and said resistor in a parallel connection.
Claim 3
Dependent Claim
22 words
A field effect transistor as recited in claim 1, wherein said diode is formed at the periphery of said gate bonding pad.
Claim 4
Dependent Claim
19 words
A field effect transistor as recited in claim 2, wherein said gate bonding pad is surrounded by said diode.
Claim 5
Dependent Claim
24 words
A field effect transistor as recited in claim 1, wherein said diode is formed under and at the periphery of said gate bonding pad.
Claim 6
Dependent Claim
19 words
A field effect transistor as recited in claim 4, wherein said gate bonding pad is surrounded by said diode.
Claim 7
Dependent Claim
19 words
A field effect transistor as recited in claim 1, wherein said resistor and said diode are made of polysilicon.
Claim 8
Dependent Claim
20 words
A field effect transistor as recited in claim 1, wherein said field effect transistor is a vertical-type field effect transistor.
Claim 9
Dependent Claim
130 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a drain electrode electrically connected to said drain region; a gate bonding pad formed at said main surface of said semiconductor substrate; a resistor made of polysilicon and formed at said semiconductor substrate; and a diode formed at said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, whereby a switching speed of said field effect transistor can be adjusted by said resistor and said diode.
Claim 10
Dependent Claim
130 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a drain electrode electrically connected to said drain region; a gate bonding pad formed at said main surface of said semiconductor substrate; a resistor made of polysilicon and formed at said semiconductor substrate; and a diode formed at said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, whereby a switching speed of said field effect transistor can be adjusted by said resistor and said diode.
Claim 11
Dependent Claim
121 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a gate bonding pad formed on said main surface of said semiconductor substrate; a diode formed on said semiconductor substrate, and a resistor formed on said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, said diode being formed at the periphery of said gate bonding pad, and said gate bonding pad being surrounded by said diode.
Claim 12
Dependent Claim
121 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a gate bonding pad formed on said main surface of said semiconductor substrate; a diode formed on said semiconductor substrate, and a resistor formed on said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, said diode being formed at the periphery of said gate bonding pad, and said gate bonding pad being surrounded by said diode.
Claim 13
Dependent Claim
123 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a gate bonding pad formed on said main surface of said semiconductor substrate; a diode formed on said semiconductor substrate, and a resistor formed on said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, said diode being formed under and at the periphery of said gate bonding pad, and said gate bonding pad being surrounded by said diode.
Claim 14
Dependent Claim
123 words
A field effect transistor comprising: a semiconductor substrate; a base region formed in said semiconductor substrate; a source region formed in said base region; a drain region formed in said semiconductor substrate; a gate electrode formed on a main surface of said semiconductor substrate; a source electrode electrically connected to said source region; a gate bonding pad formed on said main surface of said semiconductor substrate; a diode formed on said semiconductor substrate, and a resistor formed on said semiconductor substrate, said diode and said resistor being connected in parallel between said gate electrode and said gate bonding pad, said diode being formed under and at the periphery of said gate bonding pad, and said gate bonding pad being surrounded by said diode.
Claim 15
Dependent Claim
61 words
A semiconductor device comprising; a semiconductor chip; a field effect transistor formed in said semiconductor chip, said field effect transistor having a gate electrode and a gate bonding pad; and a resistor made of polysilicon and a diode incorporated in said semiconductor chip, said resistor and said diode being connected in parallel between said gate electrode and said gate bonding pad.
Claim 16
Dependent Claim
61 words
A semiconductor device comprising; a semiconductor chip; a field effect transistor formed in said semiconductor chip, said field effect transistor having a gate electrode and a gate bonding pad; and a resistor made of polysilicon and a diode incorporated in said semiconductor chip, said resistor and said diode being connected in parallel between said gate electrode and said gate bonding pad.
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