US5227329A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Hitachi Ltd
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Filing: 1991-08-30
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Granted: 1993-07-13
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Expires: 2011-08-30
Abstract
Abstract A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200° C. and lower than 400° C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.
Inventors
- 👤 Takashi Kobayashi
- 👤 Shimpei Iijima
- 👤 Atsushi Hiraiwa
- 👤 Nobuyoshi Kobayashi
- 👤 Takashi Hashimoto
- 👤 Mitsuo Nanba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D84/00; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D62/133; H10D62/17; H10D62/177; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/144
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
121 words
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage and having a shallow p-type region, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel, forming a boron doped amorphous silicon film covering the exposed surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under conditions including a pressure lower than 1 atm and a temperature higher than 200° C. and lower than 400° C., and applying a heat treatment to effect diffusion of the boron from said amorphous silicon film into said semiconductor substrate through said exposed surface thereby forming a shallow p-type region in a surface region of said semiconductor substrate.
Claim 2
Independent Claim
121 words
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage and having a shallow p-type region, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel, forming a boron doped amorphous silicon film covering the exposed surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under conditions including a pressure lower than 1 atm and a temperature higher than 200° C. and lower than 400° C., and applying a heat treatment to effect diffusion of the boron from said amorphous silicon film into said semiconductor substrate through said exposed surface thereby forming a shallow p-type region in a surface region of said semiconductor substrate.
Claim 3
Dependent Claim
27 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein the p-type region is a source or a drain region of a MOS transistor.
Claim 4
Dependent Claim
25 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein the p-type region is an emitter or a base of bipolar transistor.
Claim 5
Dependent Claim
38 words
A method of manufacturing a semiconductor device as defined in claim 1, further comprising a step of applying a heat treatment to the amorphous silicon film in an inert atmosphere and transforming it into a polycrystalline silicon film.
Claim 6
Dependent Claim
25 words
A method of manufacturing a semiconductor device as defined in claim 4, wherein the temperature for the heat treatment is not higher than 700° C.
Claim 7
Independent Claim
110 words
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel and forming a boron doped amorphous silicon film on a surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under the conditions including a pressure lower than 1 atm and a temperature higher than 200° C. and lower than 400° C., wherein the boron doped amorphous silicon film is formed in the opening of a dielectric film formed on the semiconductor substrate and said amorphous silicon in said opening is substituted by tungsten.
Claim 8
Independent Claim
110 words
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel and forming a boron doped amorphous silicon film on a surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under the conditions including a pressure lower than 1 atm and a temperature higher than 200° C. and lower than 400° C., wherein the boron doped amorphous silicon film is formed in the opening of a dielectric film formed on the semiconductor substrate and said amorphous silicon in said opening is substituted by tungsten.
Claim 9
Dependent Claim
31 words
A method of manufacturing a semiconductor device as defined in claim 6, wherein the substitution with tungsten is conducted by bringing the boron doped amorphous silicon film with a tungsten-containing gas.
Claim 10
Dependent Claim
20 words
A method of manufacturing a semiconductor device as defined in claim 7, wherein the tungsten-containing gas is WF 6 .
Claim 11
Dependent Claim
62 words
A method of manufacturing a semiconductor device as defined in claim 6, wherein the boron doped amorphous silicon film is formed on a film selected from the group consisting of transition metal films, nitride or silicide films of transition metals, aluminum nitride films, cobalt silicide films and titanium-tungsten alloy films previously formed on the surface of the semiconductor substrate in the opening.
Claim 12
Dependent Claim
37 words
A method of manufacturing a semiconductor device as defined in claim 6, wherein the substitution for tungsten is conducted after forming a film for preventing the nucleation of tungsten on the surface of the amorphous silicon film.
Claim 13
Dependent Claim
26 words
A method of manufacturing a semiconductor device as defined in claim 10, wherein the film for preventing the nucleation of tungsten is a silicon dioxide film.
Claim 14
Dependent Claim
26 words
A method of manufacturing a semiconductor device as defined in claim 11, wherein the film thickness of the silicon dioxide film is 1 to 3 nm.
References Cited (Backward Citations)
US3664896A
Cited
JPS60245131A
Cited
US4696702A
Cited
US4648175A
Cited
US4751101A
Cited
US4988632A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |