US4696702A
Expired / Lapsed
US
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Method of depositing wide bandgap amorphous semiconductor materials
Assignee: Etro SpA
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Filing: 1986-11-24
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Granted: 1987-09-29
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Expires: 2006-11-24
Abstract
Abstract A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200° C. and a pressure in the range from about 1-50 Torr.
Inventors
- 👤 Frank B. Ellis, Jr.
- 👤 Alan E. Delahoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
The method of fabricating an amorphous silicon semiconductor material on a substrate which comprises: decomposing one or more gaseous phase higher order silanes in the presence of a p-type catalytic dopant without photo-sensitization at a substrate temperature of about 200° C. and a pressure in the range from about 1 to 50 Torr to deposit on said substrate a p-type amorphous semiconductor material having a wide bandgap in the range from about 1.8 to 2.6 electron volts.
Claim 2
Independent Claim
77 words
The method of fabricating an amorphous silicon semiconductor material on a substrate which comprises: decomposing one or more gaseous phase higher order silanes in the presence of a p-type catalytic dopant without photo-sensitization at a substrate temperature of about 200° C. and a pressure in the range from about 1 to 50 Torr to deposit on said substrate a p-type amorphous semiconductor material having a wide bandgap in the range from about 1.8 to 2.6 electron volts.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the p-type dopant is a boron contributor.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein a carbon contributor is excluded from the reactants.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said dopant is a gas which decomposes into radicals which react with said silanes to produce silicon containing radicals which undergo further gas-phase reaction.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein said decomposition takes place with gas-phase residence time in the range from about 1 to 500 seconds.
Claim 7
Dependent Claim
10 words
The method of claim 1 further including a carbon contributor.
Claim 8
Independent Claim
123 words
The method of fabricating an amorphous silicon semiconductor material on a substrate, which comprises the steps of: (a) decomposing a catalytic dopant at a temperature below the normal decomposition temperature of at least one higher order silane; (b) decomposing said at least one higher order silane in the presence of the decomposed catalytic dopant; thereby to cause the decomposition of the at least one higher order silane at a temperature below that at which said at least one higher order silane is normally decomposable and thereby to deposit on a substrate maintained at a temperature of about 200° C. an amorphous silicon film which has a wider bandgap than is commonly associated with the decomposition of said at least one higher order silane.
Claim 9
Independent Claim
123 words
The method of fabricating an amorphous silicon semiconductor material on a substrate, which comprises the steps of: (a) decomposing a catalytic dopant at a temperature below the normal decomposition temperature of at least one higher order silane; (b) decomposing said at least one higher order silane in the presence of the decomposed catalytic dopant; thereby to cause the decomposition of the at least one higher order silane at a temperature below that at which said at least one higher order silane is normally decomposable and thereby to deposit on a substrate maintained at a temperature of about 200° C. an amorphous silicon film which has a wider bandgap than is commonly associated with the decomposition of said at least one higher order silane.
Claim 10
Dependent Claim
25 words
The method of claim 7 further including additional hydrogen in the decomposed at least one higher order silane by virtue of the lower decomposition temperature.
References Cited (Backward Citations)
US4459163A
Cited
US4451538A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |