Protection element and method of manufacturing same

Claim 1

A semiconductor device having an electrostatic charge protector comprising: (a) a semiconductor body of silicon of a first conductivity type, (b) at least one monolithic integrated circuit disposed in said semiconductor body, (c) a field oxide pattern disposed to separate at least portions of said integrated circuit, (d) at least one protection element having at least one active zone of a second conductivity type, said at least one protection element being disposed to adjoin said field oxide pattern at least in part opposite to said integrated circuit, and said at least one protection element having a pn junction with said semiconductor body, and (e) a metal silicide electrode layer disposed in contact both with said at least one active zone and with said field oxide pattern to protect against electrostatic discharge, said metal silicide electrode layer being disposed on said field oxide pattern for a given distance of at least 0.5 μm from an edge with said at least one active zone and being disposed on said at least one active zone for a second given distance of about 1.0 μm from said edge, wherein electrostatic discharge is prevented by said metal silicide electrode layer and said at least one protection element, and wherein said protection element includes two active zones separated by said field oxide pattern, and wherein said metal silicide electrode layer is disposed onto said field oxide pattern from opposite sides with a separation of about 0.9 μm.