EP0112034A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A MIS integrated circuit device protected from static charge
Assignee: Fujitsu Ltd
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Filing: 1983-11-10
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Granted: —
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Expires: 2003-11-10
Abstract
Abstract An IC circuit is protected from static charge break down by a protection circuit, which has a diffusion region (22) and a conductive pattern (25). The diffusion region works as a clamp diode and as a series resistor. The conductive pattern connects the clamp diode to the input line (27) of the lC. The conductive pattern has an elongated form. It separates the input line from the contact point (24) of the clamp diode which is severely heated during leakage of static charge through the diode. The conductive pattern is made from a high melting point metal or metal silicide to prevent it melting. A polysilicon layer (28) may be sandwiched between the conductive pattern and the substrate (21) to prevent migration of atoms from the conductive pattern to the substrate.
Inventors
- 👤 Yoshihiro C/O Fujitsu Limited Takemae
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 01:57
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/60; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
44 words
A MIS IC device provided with a static charge protection circuit connected to an input terminal thereof, said protection circuit comprising a diffusion region and a conductive pattern, of high melting point material, via which the diffusion region is connected to the input terminal.
Claim 2
Dependent Claim
44 words
A MIS IC device provided with a static charge protection circuit connected to an input terminal thereof, said protection circuit comprising a diffusion region and a conductive pattern, of high melting point material, via which the diffusion region is connected to the input terminal.
Claim 3
Dependent Claim
23 words
A MIS IC device as claimed in claim 1, wherein the protection circuit further comprises a conductive polysilicon under-layer beneath said conductive pattern.
Claim 4
Dependent Claim
27 words
A MIS IC device as claimed in claim 2, in which the resistivity of said conductive polysilicon under-layer is less than a few tens Ω per square.
Claim 5
Dependent Claim
29 words
A MIS IC device as claimed in claim 2 or 3, in which the thickness of said conductive polysilicon under-layer is less than a few thousands A O .
Claim 6
Dependent Claim
27 words
A MIS IC device as claimed in claim 4, in which the thickness of said polysilicon layer is from a few hundreds to a few thousands A°.
Claim 7
Dependent Claim
23 words
A MIS IC device as claimed in any preceding claim, in which the high melting point material is of high melting point metal.
Claim 8
Dependent Claim
24 words
A MIS IC device as claimed in claim 6, in which the high melting point metal includes at least one of tungsten and molybdenum.
Claim 9
Dependent Claim
35 words
A MIS IC device as claimed in any one of claims I to 5, in which the high melting point material includes at least one of molybdenum silicide, platinum silicide, tungsten silicide and titanium silicide.
Claim 10
Dependent Claim
30 words
A MIS IC device as claimed in any preceding claim, in which the sheet resistivity of the said high melting point material is less than a few Ω per square.
Claim 11
Dependent Claim
84 words
A MIS IC device as claimed in any preceding claim, in which one end of said conductive pattern is connected to said diffusion layer through a contact window or hole fabricated in a first insulation layer which separates said conductive pattern from said diffusion region, and the other end of said conductive pattern is connected to the said input terminal of the device through a contact window or hole fabricated in a second insulation layer which separates said conductive pattern from said input terminal.
Claim 12
Dependent Claim
41 words
A MIS IC device as claimed in claim 10, in which said conductive pattern has an elongated form and at least the whole length of said conductive pattern, said diffusion layer and said input terminal are not fabricated one upon another.
Claim 13
Dependent Claim
27 words
A MIS IC device as claimed in claim 10 or 11, in which said first insulation layer and said second insulation layer are made of silicon dioxide.
Claim 14
Dependent Claim
15 words
A MIS IC device as claimed in any preceding claim, being a silicon MIS IC.
References Cited (Backward Citations)
No citation records indexed.
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