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US5225499A Expired / Lapsed US ⏱️ 0.0 years remaining

Resin composition for encapsulating of semiconductor and semiconductor apparatus using of the same

Assignee: Hitachi Ltd
•
Filing: 1991-03-01
•
Granted: 1993-07-06
•
Expires: 2011-03-01
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Abstract

Abstract A resin composition having superior molding character, bonding character, moisture resistance, and heat resistance, for encapsulating of a semiconductor which contains: (a) An ether imide group compound represented by the general formula (I) <IMAGE> (I) wherein, each of R1-R4, R8 and R8 is hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine or bromine, and R1-R4, R7 and R8 may be same or different each other, and each of R5 and R6 is hydrogen, methyl group, ethyl group, trifluoromethyl group or trichloromethyl group, and R5 and R6 may be same or different each other, and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond of an extract of the compound obtained by extraction with water in an amount 10 times by weight of the compound at 120 DEG C. for more than 100 hours has electric conductivity of at most 300 s/cm ph of 1.5-7; and (b) an epoxy resin as well as a semiconductor apparatus encapsulated with the resin.

Inventors

  • 👤 Hiroyoshi Kokaku
  • 👤 Masatsugu Ogata
  • 👤 Masanori Segawa
  • 👤 Hiroshi Hozoji
  • 👤 Akio Nishikawa
  • 👤 Fumio Sato

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 03:03
CPC Classifications
C; C08; C08L; C08L79/00; C08L79/04; C08L79/08; H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; C08G; C08G59/00; C08G59/18; C08G59/40; C08G59/4007; C08G59/4014; C08G59/4042; C08L63/00; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/40; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 178 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR5## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of the R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, and (b) an epoxy resin.
Claim 2
Dependent Claim 178 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR5## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of the R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, and (b) an epoxy resin.
Claim 3
Dependent Claim 206 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR6## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other; each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having an electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, (b) an epoxy resin, and (c) a phenolic resin.
Claim 4
Dependent Claim 206 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR6## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other; each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having an electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, (b) an epoxy resin, and (c) a phenolic resin.
Claim 5
Dependent Claim 90 words
A resin composition for encapsulating a semiconductor according to claim 2, wherein said phenolic resin has a structure represented by the general formula (II) or (III): ##STR7## wherein R 9 represents H or --CH 2 OH, R 10 represents --CH 2 -- or --CH 2 --O--CH 2 --, R 11 represents --CH 2 , --C(CH 3 ) 2 --, or --SO 2 --, and each R 9 , R 10 and R 11 may be the same or different from another and n represents an integer of at least 1.
Claim 6
Dependent Claim 143 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR8## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, which has a purity of at least 95%, and (b) an epoxy resin.
Claim 7
Dependent Claim 143 words
A resin composition for encapsulating a semiconductor comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR8## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, which has a purity of at least 95%, and (b) an epoxy resin.
Claim 8
Dependent Claim 191 words
A semiconductor apparatus having a semiconductor device at least a part of which is coated and/or encapsulated with a resin composition comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR9## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having electrical conductivity of at most 30 μs/cm and a pH of 1.5-7, and (b) an epoxy resin.
Claim 9
Dependent Claim 191 words
A semiconductor apparatus having a semiconductor device at least a part of which is coated and/or encapsulated with a resin composition comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR9## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other, each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having electrical conductivity of at most 30 μs/cm and a pH of 1.5-7, and (b) an epoxy resin.
Claim 10
Dependent Claim 196 words
A semiconductor apparatus having a semiconductor device at least a part of which is coated and/or encapsulated with a resin composition comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR10## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other; each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having an electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, (b) an epoxy resin, and (c) a phenolic resin.
Claim 11
Dependent Claim 196 words
A semiconductor apparatus having a semiconductor device at least a part of which is coated and/or encapsulated with a resin composition comprising: (a) an ether imide group-containing compound represented by the general formula (I): ##STR10## wherein each of R 1 -R 4 , R 7 and R 8 is selected from the group consisting of hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine and bromine, and R 1 -R 4 , R 7 and R 8 may be the same or different from each other; each of R 5 and R 6 is selected from the group consisting of hydrogen, methyl group, ethyl group, trifluoromethyl group and trichloromethyl group, and R 5 and R 6 may be the same or different from each other; and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond, an extract of said compound obtained by extraction with water in an amount 10 times by weight of the compound at a 120° C. for more than 100 hours having an electrical conductivity of at most 300 μs/cm and a pH of 1.5-7, (b) an epoxy resin, and (c) a phenolic resin.
Claim 12
Dependent Claim 88 words
A semiconductor apparatus according to claim 6, wherein said phenolic resin has a structure represented by the general formula (II) or (III): ##STR11## wherein R 9 represents H or --CH 2 OH, R 10 represents --CH 2 -- or --CH 2 --O--CH 2 --, R 11 represents --CH 2 , --C(CH 3 ) 2 --, or --SO 2 --, and each of R 9 , R 10 and R 11 may be the same or different from the other and n represents an integer of at least 1.

References Cited (Backward Citations)

US3568012A Cited
US4933744A Cited
US4617584A Cited
US4618878A Cited
US4900807A Cited
US4951122A Cited
JPH01126321A Cited
US5082880A Cited
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