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US5223723A Expired / Lapsed US ⏱️ 0.0 years remaining

Light emitting device

Assignee: Nokia Bell Labs
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Filing: 1991-06-18
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Granted: 1993-06-29
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Expires: 2011-06-18
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Abstract

Abstract A novel light emitting semiconductor device is disclosed. The device utilizes real space transfer (RST) of carriers, and comprises regions of opposite conductivity type separated by a barrier layer. The first region (termed the "emitter") comprises at least two contacts. Application of appropriate bias between the two contacts and between the emitter and the second region results in injection of hot carriers into the second region, resulting in luminescence in the second region. The invention can be embodied in coherent as well as incoherent light sources. A preferred embodiment is a vertical cavity surface emitting laser. The device can serve as a novel logic element that has electrical inputs and an optical output, and provides a non-trivial logic function.

Inventors

  • 👤 Sergey Luryi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-10 01:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18369; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; G; G02; G02F; G02F3/00; H01S5/06; H01S5/062; H01S5/06203; H01S5/06209; H01S5/06213; H01S5/18308; H01S5/18341; H01S5/20; H01S5/2054; H01S5/2059

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 244 words
An article comprising a semiconductor light-emitting element that comprises a) a first semiconductor region (to be referred to as the "emitter") comprising a semiconductor region of a first effective conductivity type; b) at least two spaced apart means for making electrical contact to the first semiconductor region; c) a second semiconductor region of a second effective conductivity type that differs from the first effective conductivity type, the means of b) being spaced from the second semiconductor region, associated with said first and second semiconductor regions being a first and at least a second bandgap, respectively, with the first bandgap not necessarily being different from the second bandgap; d) means for making electrical contact to the second semiconductor region; and e) a third semiconductor region intermediate the first and second semiconductor regions, the third semiconductor region (to be referred to as the "barrier") comprising undoped semiconductor material whose bandgap is such that under normal forward bias conditions a potential barrier for first conductivity type carriers exists between the emitter and the third semiconductor region, such that a potential barrier for second conductivity type carriers exists between the second and the third semiconductor region, and such that under said normal forward bias conditions a current that comprises hot charge carriers of the first conductivity type can flow from the first to the second semiconductor region, essentially without a simultaneous flow of charge carriers of the second conductivity type from the second to the first semiconductor region.
Claim 2
Dependent Claim 244 words
An article comprising a semiconductor light-emitting element that comprises a) a first semiconductor region (to be referred to as the "emitter") comprising a semiconductor region of a first effective conductivity type; b) at least two spaced apart means for making electrical contact to the first semiconductor region; c) a second semiconductor region of a second effective conductivity type that differs from the first effective conductivity type, the means of b) being spaced from the second semiconductor region, associated with said first and second semiconductor regions being a first and at least a second bandgap, respectively, with the first bandgap not necessarily being different from the second bandgap; d) means for making electrical contact to the second semiconductor region; and e) a third semiconductor region intermediate the first and second semiconductor regions, the third semiconductor region (to be referred to as the "barrier") comprising undoped semiconductor material whose bandgap is such that under normal forward bias conditions a potential barrier for first conductivity type carriers exists between the emitter and the third semiconductor region, such that a potential barrier for second conductivity type carriers exists between the second and the third semiconductor region, and such that under said normal forward bias conditions a current that comprises hot charge carriers of the first conductivity type can flow from the first to the second semiconductor region, essentially without a simultaneous flow of charge carriers of the second conductivity type from the second to the first semiconductor region.
Claim 3
Dependent Claim 13 words
An article according to claim 1, wherein the light-emitting element is a laser.
Claim 4
Dependent Claim 17 words
An article according to claim 2, wherein the laser is a vertical cavity surface emitting laser (VCSEL).
Claim 5
Dependent Claim 54 words
An article according to claim 3, wherein the VCSEL comprises at least one multilayer reflecting means that comprises at least one dielectric layer, said reflecting means positioned such that essentially none of the charge carriers of the first conductivity type that flow from the first to the second semiconductor region traverse said reflecting means.
Claim 6
Dependent Claim 14 words
An article according to claim 1, wherein the light-emitting element comprises III-V semiconductor material.
Claim 7
Dependent Claim 12 words
An article according to claim 5, wherein the light-emitting element comprises InP.
Claim 8
Dependent Claim 14 words
An article according to claim 1, wherein the first effective conductivity type is n-type.
Claim 9
Dependent Claim 31 words
An article according to claim 1, wherein the barrier has a thickness that exceeds an impact ionization distance of first conductivity type carriers in the barrier under normal forward bias conditions.
Claim 10
Dependent Claim 22 words
The article of claim 1, wherein the article comprises a multiplicity of said light emitting elements situated on common semiconductor substrate means.
Claim 11
Dependent Claim 26 words
The article of claim 1, further comprising means for applying electrical bias to said element, and means responsive to the light emitted by the light-emitting element.
Claim 12
Dependent Claim 36 words
The article of claim 10, wherein the light emitting element is a logic element, and the light-responsive means comprise a further logic element whose electrical state depends on the electrical state of the light emitting element.
Claim 13
Dependent Claim 31 words
The article of claim 10, wherein the light emitting element is a logic element that comprises at least three spaced apart means for making electrical contact to the first semiconductor region.

References Cited (Backward Citations)

CH428848A Cited
US4686550A Cited
EP0253174A1 Cited
US4973858A Cited
US4903092A Cited
US5091756A Cited
US4974231A Cited
US5081633A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-06-28 1996-12-28 1997-06-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-06-28 2000-12-28 2001-06-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-06-28 2004-12-28 2005-06-29 $7700.00 Window Closed / Lapsed

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