US4974231A
Expired / Lapsed
US
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Visible light semiconductor laser
Assignee: NEC Corp
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Filing: 1989-01-23
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Granted: 1990-11-27
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Expires: 2009-01-23
Abstract
Abstract In a visible light semiconductor laser with (Al x Ga 1-x ) 0 .5 In 0 .5 P (0≦x ≦1) crystal layers and a process for growing an(Al x Ga 1-x ) 0 .5 In 0 .5 P (0≦x≦1) crystal, a GaAs substrate on which (Al x Ga 1-x ) 0 .5 In 0 .5 P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (Al x Ga 1-x ) 0 .5 In 0 .5 P. As a result, a bandgap energy Eg of the (Al x Ga 1-x ) 0 .5 In 0 .5 P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.
Inventors
- 👤 Akiko Gomyo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:09
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/3202
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
148 words
In a visible light semiconductor laser with (Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, the improvement comprising: a GaAs substrate; epitaxial layers grown on said GaAs substrate including an active layer of said (Al x Ga 1- x) 0 .5 In 0 .5 P crystal layers, said active layer being positioned so as to be neither a top layer nor a bottom layer of said epitaxial layers; and p- and n-electrodes provided respectively on a top surface of an uppermost layer of said epitaxial layers and a bottom surface of said substrate for applying a predetermined voltage across said GaAs substrate and said epitaxial layers; wherein a main plane of said GaAs substrate is one selected from a (110) plane, a plane equivalent to said (110) plane, a (111) plane, and a plane equivalent to said (111) plane.
Claim 2
Dependent Claim
148 words
In a visible light semiconductor laser with (Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, the improvement comprising: a GaAs substrate; epitaxial layers grown on said GaAs substrate including an active layer of said (Al x Ga 1- x) 0 .5 In 0 .5 P crystal layers, said active layer being positioned so as to be neither a top layer nor a bottom layer of said epitaxial layers; and p- and n-electrodes provided respectively on a top surface of an uppermost layer of said epitaxial layers and a bottom surface of said substrate for applying a predetermined voltage across said GaAs substrate and said epitaxial layers; wherein a main plane of said GaAs substrate is one selected from a (110) plane, a plane equivalent to said (110) plane, a (111) plane, and a plane equivalent to said (111) plane.
Claim 3
Dependent Claim
52 words
In a visible light semiconductor laser with (l x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, according to claim 1, the further improvement wherein said epitaxial layers are grown by a method selected from metal organic vapor-phase epitaxy (MOVPE) and molecular beam epitaxy (MBE).
Claim 4
Dependent Claim
67 words
In a visible light semiconductor laser with (Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, according to claim 2, the further improvement wherein said epitaxial layers are grown at a growth temperature of 600 ˜ 750° C. and with a V/III ratio of 60 to 450 between V group material and III group material by said MOVPE method.
Claim 5
Dependent Claim
67 words
In a visible light semiconductor laser with Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, according to claim 2, the further improvement wherein said epitaxial layers include: an-cladding layer provided on a bottom surface of said active layer and a top surface of said substrate; and a p-cladding layer provided on a top surface of said active layer.
Claim 6
Dependent Claim
84 words
In a visible light semiconductor laser with (Al x )Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, according to claim 4, the further improvement wherein said epitaxial layers further include: an n-current blocking layer, which has a current injection region forming a central longitudinal trench therethrough, and which is provided on a top surface of said p-cladding layer; and a cap layer provided on a top surface of said n-current blocking layer and said current injection region.
Claim 7
Dependent Claim
67 words
In a visible light semiconductor laser with (Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1)crystal layers, according to claim 1, the further improvement wherein said epitaxial layers includes, an n-cladding layer provided on a bottom surface of said active layer and a top surface of said substrate; and a p-cladding layer provided on a top surface of said active layer.
Claim 8
Dependent Claim
84 words
In a visible light semiconductor laser with (Al x Ga 1- x) 0 .5 In 0 .5 P(0 ≦ × ≦ 1) crystal layers, according to claim 6, the further improvement wherein said epitaxial layers further include; an n-current blocking layer, which has a current injection region forming a central longitudinal trench therethrough, and which is provided on a top surface of said p-cladding layer; and a cap layer provided on a top surface of said n-current blocking layer and said current injection region.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-11-26 | 1994-05-28 | 1994-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-26 | 1998-05-28 | 1998-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-26 | 2002-05-28 | 2002-11-27 | $7700.00 | Window Closed / Lapsed |