EP0253174A1
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EP
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Resonant tunneling semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1987-06-26
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Granted: —
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Expires: 2007-06-26
Abstract
Abstract This disclosure relates to resonant tunneling semiconductor devices useful for transport functions such as switching or amplification, and also for electro-optical conversions. In the structure of these devices, a central potential well (l0) is formed of an opposite conductivity type of semiconductor material to two semiconductor layers (l2) outside resonant tunneling barriers (l4) on each side of the central potential well, such that electrons in the well can tunnel to and from the outside semiconductor layers. The central potential well serves as the base of a three terminal device in transport applications, and as the light responsive portion for electro-optical applications. In one disclosed embodiment, the device is constructed in five layers of the most commonly used gallium-aluminium-arsenide compounds, an n GaAs substrate, undoped GaAlAs, p GaAs, undoped GaAlAs, and n GaAs.
Inventors
- 👤 Leroy Li-Gong Chang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:50
CPC Classifications
B; B82; B82Y; B82Y20/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10F; H10F77/00; H10F77/10; H10F77/14; H01S5/3432
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
50 words
A resonant tunneling semiconductor device, comprising first and second layers (l2) of like conductivity semiconductor crystals separated by first and second barriers (l4) of semiconductor crystal having therebetween a quantum well (l0) of opposite conductivity semiconductor crystal, such that conduction occurs by tunneling serially through the first and second barriers.
Claim 2
Dependent Claim
50 words
A resonant tunneling semiconductor device, comprising first and second layers (l2) of like conductivity semiconductor crystals separated by first and second barriers (l4) of semiconductor crystal having therebetween a quantum well (l0) of opposite conductivity semiconductor crystal, such that conduction occurs by tunneling serially through the first and second barriers.
Claim 3
Dependent Claim
28 words
A resonant tunneling semiconductor device as claimed in claim l, wherein an electrical contact extends to the quantum well, and is formed by an opposite conductivity semiconductor material.
Claim 4
Dependent Claim
40 words
A resonant tunneling semiconductor device as claimed in claims l or 2, wherein the first and second layers (l2) of like conductivity semiconductor crystals are n type semiconductor crystal, and the quantum well (l0) is a p type semiconductor crystal.
Claim 5
Dependent Claim
48 words
A resonant tunneling semiconductor device as claimed in one of the preceding claims, wherein the first and second layer of n type semiconductor crystal are n GaAs, the first and second barrier of semiconductor crystal are undoped GaAlAs, and the quantum well is a p GaAs semiconductor crystal.
Claim 6
Dependent Claim
39 words
A resonant tunneling semiconductor device as claimed in one of the preceding claims, wherein the first and second layer of like conductivity semiconductor crystal are p type semiconductor crystals, and the quantum well is an n type semiconductor crystal.
Claim 7
Dependent Claim
76 words
A resonant tunneling semiconductor device as claimed in one of claims l to 5, wherein the resonant tunneling device has a transport switching function wherein the first and second layers of like conductivity semiconductor crystal are the collector and emitter, and the quantum well is the base, wherein when the voltage applied to the base equals a threshold voltage, the device becomes conductive to provide for electrical conduction between the emitter and the collector (Fig. 2).
Claim 8
Dependent Claim
67 words
A resonant tunneling semiconductor device as claimed in one of claims l to 5, wherein the resonant tunneling device has a transport amplification function wherein the first and second layers of like conductivity semiconductor crystal are the collector and emitter, and the quantum well is the base, wherein when the voltage applied to the base determines the amplification function between the emitter and the collector (Fig. 3).
Claim 9
Dependent Claim
51 words
A resonant tunneling semiconductor device as claimed in one of claims l to 5, wherein the resonant tunneling device has an electro-optic detection function wherein the amount of radiation incident on the quantum well determines the current flow between the first and second layers of like conductivity semiconductor crystal (Fig. 5).
Claim 10
Dependent Claim
57 words
A resonant tunneling semiconductor device as claimed in one of claims l to 5, wherein the resonant tunneling device has an elecro-optic lasing function wherein the amount of radiation emitted by the quantum well is determined by the voltages of the first and second layers of like conductivity semiconductor crystal relative to said quantum well (Fig. 4).
References Cited (Backward Citations)
US4208667A
Cited
EP0159273A2
Cited
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