EP0159273A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1985-04-16
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Granted: —
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Expires: 2005-04-16
Abstract
Abstract A semiconductor device comprising an emitter potential barrier (5), a collector potential barrier (3), a base (4) between the emitter potential barrier and the collector potential barrier, an emitter (6) being in contact, through the emitter potential barrier (5), with the base (4), and a collector (2) being in contact, through the collector potential barrier (3), with the base (4). The base has a thin base width capable of generating discrete energy levels of minority carriers therein. Carriers which are minority carriers in the base can be transferred from the emitter via the discrete energy levels in the base to the collector by resonant tunneling at an ultra high speed.
Inventors
- 👤 Takashi Mimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 04:47
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/165; B; B82; B82Y; B82Y10/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D62/133; H10D62/137
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
152 words
A semiconductor device comprising: an emitter potential barrier (5) having a thickness capable of allowing a tunneling effect; a collector potential barrier (3) having a thickness capable of allowing a tunneling effect; a base (4)sandwiched between said emitter potential barrier (5) and said collector potential barrier (3), having a base width capable of generating discrete energy levels'of minority carriers therein, and having a base energy gap between a base conduction band and a base valence band; an emitter (6) being in contact, through said' emitter potential barrier, with said base; and a collector (2) beinq in contact, through said collector potential barrier, with said base; said emitter potential barrier having an energy gap greater than said base energy gap; said collector potential barrier,having an energy gap greater than said base energy gap; and carriers being transferred by tunneling from said emitter via said discrete energy levels in said base to said collector.
Claim 2
Dependent Claim
152 words
A semiconductor device comprising: an emitter potential barrier (5) having a thickness capable of allowing a tunneling effect; a collector potential barrier (3) having a thickness capable of allowing a tunneling effect; a base (4)sandwiched between said emitter potential barrier (5) and said collector potential barrier (3), having a base width capable of generating discrete energy levels'of minority carriers therein, and having a base energy gap between a base conduction band and a base valence band; an emitter (6) being in contact, through said' emitter potential barrier, with said base; and a collector (2) beinq in contact, through said collector potential barrier, with said base; said emitter potential barrier having an energy gap greater than said base energy gap; said collector potential barrier,having an energy gap greater than said base energy gap; and carriers being transferred by tunneling from said emitter via said discrete energy levels in said base to said collector.
Claim 3
Dependent Claim
23 words
A semiconductor device as set forth in claim 1, wherein said emitter has an emitter energy gap greater than said base energy gap.
Claim 4
Dependent Claim
71 words
A semiconductor device as set forth in claim 1, wherein said semiconductor device is a first transistor QBT11, and further comprising a second transistor QBT12 having the same structure as said first transistor except that the discrete energy levels in the base of said second transistor are different from the discrete energy levels in the base of said first transistor, said first transistor and said second transistor being connected in series.
Claim 5
Dependent Claim
54 words
A semiconductor device as set forth in claim 1, wherein said emitter has an energy gap between an emitter conduction band and an emitter valence band, and further comprising a bias means for aligning the lowest energy level of said emitter conduction band with any one of said discrete energy levels in said base.
Claim 6
Dependent Claim
57 words
A semiconductor device as set forth in claim 1, wherein said base has a thickness in the range between 20 angstroms and 200 angstroms, said emitter potential barrier has a thickness in the range between 10 angstroms and 200 angstroms, and said collector potential barrier has a thickness in the range between 10 angstroms and 200 angstroms.
Claim 7
Dependent Claim
55 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by an n-type GaAs, said emitter potential barrier is formed by a p-type AlGaAs, said base is formed by a p-type GaAs, said collector potential barrier is formed by a p-type AlGaAs, and said collector is formed by an n-type GaAs.
Claim 8
Dependent Claim
55 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by an n-type GaAs, said emitter potential barrier is formed by an intrinsic semiconductor, said base is formed by a p-type GaAs, said collector potential barrier is formed by an intrinsic semiconductor, and said collector is formed by an n-type GaAs.
Claim 9
Dependent Claim
45 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by Ge, said emitter potential barrier is formed by GaAs, said base is formed by Ge, said collector potential barrier is formed by GaAs, and said collector is formed by Ge.
Claim 10
Dependent Claim
45 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by SiGe, said emitter potential barrier is formed by Si, said base is formed by SiGe, said collector potential barrier is formed by Si, and said collector is formed by SiGe.
Claim 11
Dependent Claim
54 words
A semiconductor device as set forth in claim 1, wherein said emitter, said emitter potential barrier, said base, said collector potential barrier, and said collector are formed by AlGaAs, the amount of Al per unit volume in said emitter potential barrier being different from the amount of Al per unit volume in said base.
Claim 12
Dependent Claim
45 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by InSb, said emitter potential barrier is formed by CdTe, said base is formed by InSb, said collector potential barrier is formed by CdTe, and said collector is formed by InSb.
Claim 13
Dependent Claim
45 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by InAs, said emitter potential barrier is formed by GaSb, said base is formed by InAs, said collector potential barrier is formed by GaAs, and said collector is formed by InAs.
Claim 14
Dependent Claim
52 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by n-type Si, said emitter potential barrier is formed by Si0 2 , said base is formed by p-type Si, said collector potential barrier is formed by Si0 2 , and said collector is formed by n-type Si.
Claim 15
Dependent Claim
51 words
A semiconductor device as set forth in claim 1, wherein said emitter is formed by Al, said emitter potential barrier is formed by SiO 2 , said base is formed by p-type Si, said collector potential barrier is formed by Si0 2 , and said collector is formed by n-type Si.
References Cited (Backward Citations)
No citation records indexed.
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