US4686550A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterojunction semiconductor devices having a doping interface dipole
Assignee: Nokia Bell Labs
•
Filing: 1984-12-04
•
Granted: 1987-08-11
•
Expires: 2004-12-04
Abstract
Abstract Heterojunction devices having doping interface dipoles near the heterojunction interface are disclosed. The doping interface dipoles comprise two charge sheets of different conductivity type which are positioned within a carrier mean free path of the heterojunction interface.
Inventors
- 👤 Federico Capasso
- 👤 Alfred Y. Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:14
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D62/00; H10D62/60; H10D62/605; H01S5/32; H01S5/3211
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
106 words
A heterojunction device comprising at least a first region of a first semiconductor material and at least a second region of a second semiconductor material, said first and said second regions having a first heterojunction interface, and a first interface dipole, said dipole comprising a first charge sheet and a second charge sheet, said first and second charge sheets being spatially separated from each other and comprising ionized donors and acceptors, respectively, at least one of said charge sheets being a heavily doped region, said charge sheets being within the lesser of a carrier mean free path or a thermal de Broglie wavelength of said interface.
Claim 2
Dependent Claim
106 words
A heterojunction device comprising at least a first region of a first semiconductor material and at least a second region of a second semiconductor material, said first and said second regions having a first heterojunction interface, and a first interface dipole, said dipole comprising a first charge sheet and a second charge sheet, said first and second charge sheets being spatially separated from each other and comprising ionized donors and acceptors, respectively, at least one of said charge sheets being a heavily doped region, said charge sheets being within the lesser of a carrier mean free path or a thermal de Broglie wavelength of said interface.
Claim 3
Dependent Claim
17 words
A device as recited in claim 1 in which said charge sheets are in the same region.
Claim 4
Dependent Claim
16 words
A device as recited in claim 1 in which said charge sheets are in different regions.
Claim 5
Dependent Claim
25 words
A device as recited in claim 2 or 3 in which said charge sheets are less than the thermal de Broglie wavelength from said interface.
Claim 6
Dependent Claim
22 words
A device as recited in claim 4 in which said charge sheets are less than approximately 10 atomic layers from said interface.
Claim 7
Dependent Claim
23 words
A device as recited in claim 1 in which said first region has a bandgap greater than the bandgap of said second region.
Claim 8
Dependent Claim
15 words
A device as recited in claim 6 comprising a two-dimensional carrier gas at said interface.
Claim 9
Dependent Claim
26 words
A device as recited in claim 7 comprising first and second electrical contacts to said second region and a third electrical contact to said first region.
Claim 10
Dependent Claim
28 words
A device as recited in claim 6 further comprising a third region of a third semiconductor material, said third region and said second region having a second interface.
Claim 11
Dependent Claim
19 words
A device as recited in claim 9 in which said first and said second regions have opposite conductivity types.
Claim 12
Dependent Claim
20 words
A device as recited in claim 10 in which said third region has the conductivity type of said first region.
Claim 13
Dependent Claim
23 words
A device as recited in claim 11 further comprising first, second and third electrical contacts to said first, second and third regions, respectively.
Claim 14
Dependent Claim
20 words
A device as recited in claim 6 in which said first and said second regions have the same conductivity type.
Claim 15
Dependent Claim
23 words
A device as recited in claim 13 further comprising a third region, said third region and said first region having a second interface.
Claim 16
Dependent Claim
23 words
A device as recited in claim 14 in which said third region has a bandgap greater than the bandgap of said second region.
Claim 17
Dependent Claim
24 words
A device as recited in claim 15 in which said third region has a conductivity type opposite to said conductivity type of said region.
Claim 18
Dependent Claim
21 words
A device as recited in claim 16 further comprising first and second electrical contacts to said second and third regions, respectively.
Claim 19
Dependent Claim
23 words
A device as recited in claim 9 in which said third region has a bandgap greater than the bandgap of said second region.
Claim 20
Dependent Claim
78 words
A device as recited in claim 18 further comprising a second doping interface dipole, said second dipole comprising a third charge sheet and a fourth charge sheet, said third and fourth charge sheets being spatially separated from each other and comprising ionized donors and acceptors, respectively, at least one of said charge sheets being a heavily doped region, being within the lesser of a carrier mean free path or a thermal de Broglie wavelength of said second interface.
Claim 21
Dependent Claim
18 words
A device as recited in claim 19 in which said first and third regions have opposite conductivity types.
Claim 22
Dependent Claim
19 words
A device as recited in claim 1 further comprising means for establishing an electric field parallel to said interface.
Claim 23
Dependent Claim
19 words
A device as recited in claim 1 further comprising means for establishing an electric field perpendicular to said interface.
Claim 24
Dependent Claim
19 words
A device as recited in claim 1 in which said charge sheets have thicknesses less than approximately 100 Angstroms.
Claim 25
Dependent Claim
31 words
A device as recited in claim 1 in which said charge sheets having doping concentrations within the range from approximately 10 17 /cm 3 to approximately 10 19 /cm 3 .
Claim 26
Dependent Claim
27 words
A device as recited in claim 1 in which said semiconductor materials are selected from the group consisting of Group IV, Group III-V and Group II-VI semiconductors.
Claim 27
Dependent Claim
21 words
A device as recited in claim 25 in which at least one of said semiconductor materials comprises a Group IV element.
Claim 28
Dependent Claim
22 words
A device as recited in claim 25 in which at least one of said semiconductor materials comprises a Group III-V compound semiconductor.
Claim 29
Dependent Claim
24 words
A device as recited in claim 27 in which said Group III-V semiconductors are selected from the group consisting of InGaAsP, AlGaAsSb, and AlInGaAs.
Claim 30
Dependent Claim
25 words
A device as recited in claim 6 in which the conduction band of said first region is below the conduction band of said second region.
References Cited (Backward Citations)
US3882533A
Cited
US4291320A
Cited
US4410902A
Cited
US4553317A
Cited
JPS58142574A
Cited
US4476477A
Cited
US4538165A
Cited
US4607272A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-10 | 1991-02-09 | 1991-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-10 | 1995-02-09 | 1995-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-10 | 1999-02-09 | 1999-08-11 | $7700.00 | Window Closed / Lapsed |