US3882533A
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Semiconductor device
Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
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Filing: 1973-07-02
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Granted: 1975-05-06
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Expires: 1993-07-02
Abstract
Abstract A semiconductor device including a body of semiconductor material having a given energy gap and lattice constant and a plurality of zones which, in a given direction, constitute a succession of alternatingly n-conductive and p-conductive zones having a given excess of donors and acceptors respectively, and each having a thickness in the given direction which is less than 103 times the lattice constant. The actual thicknesses and doping concentrations of the p-conductive and n-conductive zones being such that the amplitude and spatial period of the wave-type potential distributions produced by the alternating conductivity type zone is of such a magnitude that the interaction effect between states in adjacent zones is small.
Inventors
- 👤 Gottfried Heinrich Dohler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 13:47
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/60; H10D62/605; H10D62/80; H10D62/81; H10D62/815; H10D62/8171
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
124 words
A Semiconductor device comprising: a body of semiconductor material with a given energy gap and a given lattice constant, said body including a plurality of zones which in a given direction constitute a succession of alternatingly n-conductive and p-conductive zones having a given excess of donors and acceptors, respectively, each of whose thickness in said given direction is less than 103 times said lattice constant, the thicknesses of said zones and the doping thereof being adjusted so that the amplitude and spatial period length of the wave-type potential distribution produced by the alternating p-conductive and n-conductive zones is of such a magnitude that the alternating effect between states in adjacent zones is small; and a pair of spaced contact electrodes on said semiconductor body.
Claim 2
Dependent Claim
124 words
A Semiconductor device comprising: a body of semiconductor material with a given energy gap and a given lattice constant, said body including a plurality of zones which in a given direction constitute a succession of alternatingly n-conductive and p-conductive zones having a given excess of donors and acceptors, respectively, each of whose thickness in said given direction is less than 103 times said lattice constant, the thicknesses of said zones and the doping thereof being adjusted so that the amplitude and spatial period length of the wave-type potential distribution produced by the alternating p-conductive and n-conductive zones is of such a magnitude that the alternating effect between states in adjacent zones is small; and a pair of spaced contact electrodes on said semiconductor body.
Claim 3
Dependent Claim
38 words
A semiconductor device as defined in claim 1 wherein said semiconductor body further includes an intrinsic zone, whose thickness is at least 10 times said lattice constant, disposed between successive n-conductive and p-conductive zones in said given direction.
Claim 4
Dependent Claim
30 words
A semiconductor device as defined in claim 2 wherein the thickness of each said n-conductive and p-conductive zone is at least 5 times, and preferably 10 times, said lattice constant.
Claim 5
Dependent Claim
26 words
A semiconductor device as defined in claim 2 wherein the thickness of each said n-conductive and p-conductive zone is at most 30 times said lattice constant.
Claim 6
Dependent Claim
41 words
A semiconductor device as defined in claim 3 wherein said p-conductive and n-conductive zones all have approximately the same thickness and the thickness of said intrinsic zones disposed therebetween is always approximately twice the thickness of said p-conductive and n-conductive zones.
Claim 7
Dependent Claim
37 words
A semiconductor device as defined in claim 2 wherein said semiconductor body includes first and second outer zones in said given direction which have a lower doping concentration than the respective adjacent said p-conductive or n-conductive zone.
Claim 8
Dependent Claim
18 words
A semiconductor body as defined in claim 6 wherein said first and second outer zones are intrinsic zones.
Claim 9
Dependent Claim
37 words
A semiconductor device as defined in claim 6 wherein said first and second outer zones are zones in which the excess of donors or acceptors, respectively, is less than that in the adjacent p-conductive or n-conductive zone.
Claim 10
Dependent Claim
65 words
A semiconductor device as defined in claim 8 wherein the sequence of zones is 1/2 p, (i, n, i, p)z, i, 1/2 n where z is a whole number greater than 1, and preferably greater than 10 and wherein the 1/2 indicates that the excess of donors or acceptors in said outer zones is one half of that in the adjacent p-conductive or n-conductive zone.
Claim 11
Dependent Claim
14 words
A semiconductor device as defined in claim 9 wherein z is greater than 100.
Claim 12
Dependent Claim
28 words
A semiconductor device as defined in claim 2 wherein said two contact electrodes ohmically contact said semiconductor body at two opposed surfaces thereof disposed in said given direction.
Claim 13
Dependent Claim
24 words
A semiconductor device as defined in claim 11 further comprising means for a voltage across said electrodes to cause said device to emit light.
Claim 14
Dependent Claim
28 words
A semiconductor device as defined in claim 12 wherein said means includes a variable voltage source whereby the frequency and intensity of the emitted light can be controlled.
Claim 15
Dependent Claim
39 words
A semiconductor device as defined in claim 2 wherein said two contact electrodes form rectifying contacts with said semiconductor body and are disposed on two opposite surfaces of said semiconductor body in a direction perpendicular to said given direction.
Claim 16
Dependent Claim
51 words
A semiconductor device as defined in claim 14 further comprising a current source and a load connected in series with said electrodes and body means for impinging radiation, particularly with ultra-violet, visible or infrarEd radiation, on said semiconductor body in said given direction to control the conductivity of the semiconductor body.
Claim 17
Dependent Claim
63 words
A semiconductor device as defined in claim 2 wherein the doping of said zones is such that the excess of donors in a given n-conductive zone and the excess of acceptors in an adjacent p-conductive zone is sufficiently small so that the space charge potential which builds up when all doping atoms are ionized is less than one tenth of said energy gap.
Claim 18
Dependent Claim
100 words
A semiconductor device as defined in claim 2 wherein the doping and the dimensions of said zones is such that at least one of the following expressions has a value which is at most the same order of magnitude as said energy gap (2 pi nD(2)e2/ epsilon ) . d/2 (2 pi nA(2)e2/ epsilon ) . d/2 wherein nD(2) and nA(2) are respectively the number of donor and acceptor atoms per unit area perpendicular to said given direction of the respective n-conductive and p-conductive zones; and d is the thickness of a period of repeating intrinsic, n-conductive and p-conductive zones.
Claim 19
Dependent Claim
22 words
A semiconductor device as defined in claim 17 wherein each of said expressions has a value substantially less than said energy gap.
Claim 20
Dependent Claim
59 words
In a method for producing a semiconductor device as defined in claim 1 including forming the plurality of p-conductive and n-conductive zones by precipitating layers of semiconductor material containing the various required doping substances in succession on a substrate, the improvement wherein a radio-active isotope of the semiconductor material is used for at least one of the doping substances.
Claim 21
Dependent Claim
68 words
A method of storing and subsequently releasing light with a semiconductor device as defined in claim 1 comprising: exposing said semiconductor device to a source of light radiation for a period of time to cause said device to absorb light energy; and applying a voltage to said electrodes to cause said semiconductor device to release the absorbed light energy as a radiation in a shorter period of time.
Claim 22
Dependent Claim
54 words
A method of controlling the intensity of a beam of light with a semiconductor device as defined in claim 1 comprising: placing said semiconductor device in the path of said beam of light; and controlling the absorption coefficient of said semiconductor body by applying a variable voltage across said contact electrodes of said device.
Claim 23
Dependent Claim
84 words
A method of converting light energy of a given wave length to light energy of a different wavelength with a semiconductor device as defined in claim 1 comprising: exposing said semiconductor device to light energy of a given period of time to cause said semiconductor body to absorb light energy; and applying a voltage across said semiconductor body to cause said body to emit longer wave light of greater intensity but during a relatively shorter period of time than said given period of time.
Claim 24
Dependent Claim
61 words
A method of measuring light intensity with a semiconductor device as defined in claim 1 comprising: exposing said semiconductor device to the light whose intensity is to be measured; and comparing the color of the light emitted by the semiconductor device with a standard color scale containing colors which correspond to the color of the semiconductor device at different light intensities.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-05 | 1978-11-04 | 1979-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-05 | 1982-11-04 | 1983-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-05 | 1986-11-04 | 1987-05-06 | $7700.00 | Window Closed / Lapsed |