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US5223449A
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Method of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductors
Assignee: Individual
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Filing: 1991-04-26
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Granted: 1993-06-29
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Expires: 2011-04-26
Abstract
Abstract Integrated circuits and fabrication methods incorporating both NPN (192, 194, 210) and PNP (196, 121, 124) heterojunction bipolar transistors together with N channel (198, 200, 216, 218) and P channel (202, 204, 220, 222) JFETs on a single substrate as illustrated in FIG. 10. MESFETs may be also be integrated on the substrate.
Inventors
- 👤 Francis J. Morris
- 👤 Donald L. Plumton
- 👤 Jau-Yuann Yang
- 👤 Han-Tzong Yuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:13
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/02; H10D84/05; H10D84/60; H10D84/67; H10D84/673; Y; Y10; Y10S; Y10S148/00; Y10S148/009; Y10S148/072
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
114 words
A method of fabricating an integrated circuit, comprising the steps of: (a) providing a first layer of a group III-V semiconductor material; (b) implanting dopants of a first conductivity type into spaced apart regions of said first layer of semiconductor material; (c) forming a second layer of group III-V semiconductor material of opposite conductivity type on said first layer; (d) forming at least two transistors of different types taken from the group consisting of NPN heterojunction bipolar, PNP heterojunction bipolar, N-channel field effect and P-channel field effect, each of said transistors including a region of said implanted dopants and a region of said second layer; and (d) forming an electrical coupling between said transistors.
Claim 2
Independent Claim
114 words
A method of fabricating an integrated circuit, comprising the steps of: (a) providing a first layer of a group III-V semiconductor material; (b) implanting dopants of a first conductivity type into spaced apart regions of said first layer of semiconductor material; (c) forming a second layer of group III-V semiconductor material of opposite conductivity type on said first layer; (d) forming at least two transistors of different types taken from the group consisting of NPN heterojunction bipolar, PNP heterojunction bipolar, N-channel field effect and P-channel field effect, each of said transistors including a region of said implanted dopants and a region of said second layer; and (d) forming an electrical coupling between said transistors.
Claim 3
Dependent Claim
28 words
The method of claim 1 further including the step of forming a third layer of group III-V semiconductor material of said first conductivity type on said second layer.
Claim 4
Dependent Claim
36 words
The method of claim 2 wherein at least one of said at least two transistors is taken from the group consisting of PNP heterojunction bipolar and N-channel field effect disposed in part in said third layer.
Claim 5
Dependent Claim
21 words
The method of claim 3 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 6
Dependent Claim
62 words
The method of claim 2 wherein said third layer is formed by providing a fourth region adjacent said first layer of graded Al x Ga 1-x As wherein x is varied from zero to 0.3, a fifth region over said first region of Al x Ga 1-x As wherein x is 0.3 and a sixth region over said second region of GaAs.
Claim 7
Dependent Claim
21 words
The method of claim 5 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 8
Dependent Claim
21 words
The method of claim 2 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said first layer is formed of GaAs.
Claim 10
Dependent Claim
62 words
The method of claim 8 wherein said second layer is formed by providing a first region adjacent said first layer of graded Al x Ga 1-x As wherein x is varied from zero to 0.3, a second region over said first region of Al x Ga 1-x As wherein x is 0.3 and a third region over said second region of GaAs.
Claim 11
Dependent Claim
62 words
The method of claim 9 wherein said third layer is formed by providing a fourth region adjacent said first layer of graded Al x Ga 1-x As wherein x is varied from zero to 0.3, a fifth region over said first region of Al x Ga 1-x As wherein x is 0.3 and a sixth region over said second region of GaAs.
Claim 12
Dependent Claim
21 words
The method of claim 10 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 13
Dependent Claim
21 words
The method of claim 9 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 14
Dependent Claim
21 words
The method of claim 8 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 15
Dependent Claim
62 words
The method of claim 1 wherein said second layer is formed by providing a first region adjacent said first layer of graded Al x Ga 1-x As wherein x is varied from zero to 0.3, a second region over said first region of Al x Ga 1-x As wherein x is 0.3 and a third region over said second region of GaAs.
Claim 16
Dependent Claim
21 words
The method of claim 14 further including the step of electrically isolating said transistors from each other within said semiconductor material.
Claim 17
Dependent Claim
21 words
The method of claim 1 further including the step of electrically isolating said transistors from each other within said semiconductor material.
References Cited (Backward Citations)
US5015594A
Cited
US4981807A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-28 | 1996-12-28 | 1997-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-28 | 2000-12-28 | 2001-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-28 | 2004-12-28 | 2005-06-29 | $7700.00 | Window Closed / Lapsed |