Broadband signal switching matrix network

Claim 2

A broadband signal switching matrix network having a cross-point matrix in FET technology, whose inputs, ej-sj, are each respectively provided with an input driver circuit, Ej, and whose outputs, zi-ai, are each respectively provided with an output amplifier circuit, Ai, and whose switching elements, Kij, respectively controlled by a holding memory cell, Hij, are respectively formed with a series circuit of a switching transistor, Tk, whose control electrode is charged with a through-connect signal or an inhibit signal and of an input transistor, Te, that has its control electrode connected to the appertaining matrix input line, sj, said series circuit having the main electrode of one of the transistors, Tk or Te, that is connected opposite from the series circuit, connected to the appertaining matrix output line, zi, whereby the matrix output line, zi, is connected to a pre-charging potential source via a pre-charging circuit, Tipc, that has an unlocking input connected to a clock signal line, T PC , having a pre-charging clock signal that defines a pre-charging phase, pv, of a bit through-connect time span subdivided into the pre-charging phase, pv, and into a remaining bit through-connect time span, so that the matrix output line, zi, is charged to a pre-charging potential in every pre-charging phase, pv, comprising a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, continuously connected to a terminal of an operating voltage source during both the pre-charging phase, pv, and the remaining bit through-connect time span.

Claim 3

The broadband signal switching matrix network according to claim 1, wherein a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, is connected to the terminal of the operating voltage source via a further transistor, Tai, individually associated to the matrix output line that has its control electrode connected to the output, ai, of an output amplifier circuit, Ai, that is individually associated to the matrix output line.

Claim 4

The broadband signals switching matrix network according to claim 1, wherein the transistor series circuit, Tk-Te, of every switching element, Kij, has its switching transistor, Tk, connected to the matrix output line, zi.

Claim 5

The broadband signal switching matrix network according to claim 1, wherein the transistor series circuit, Tk-Te, of every switching element, Kij, has its input transistor, Te, connected to the matrix output line, zi.

Claim 6

A broadband signal switching matrix network having a cross-point matrix in FET technology, whose inputs, ej-sj, are each respectively provided with an input driver circuit, Ej, and whose outputs, zi-ai, are each respectively provided with an output amplifier circuit, Ai, and whose switching elements, Kij, respectively controlled by a holding memory cell, Hij, are respectively formed with a series circuit of a switching transistor, Tk, whose control electrode is charged with a through-connect signal or an inhibit signal and of an input transistor, Te, that has its control electrode connected to the appertaining matrix input line, sj, said series circuit having the main electrode of one of the transistors, Tk or Te, that is connected opposite from the series circuit, connected to the appertaining matrix output line, zi, whereby the matrix output line, zi, is connected to a pre-charging potential source via a pre-charging circuit, Tipc, that has an unlocking input connected to a clock signal line, T PC , having a pre-charging clock signal that defines a pre-charging phase, pv, of a bit through-connect time span subdivided into the pre-charging phase, pv, and into a remaining bit through-connect time span, so that the matrix output line, zi, is charged to a pre-charging potential in every pre-charging phase, pv, comprising a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, continuously connected to a terminal of an operating voltage source during both the pre-charging phase, pv, and the remaining bit through-connect time span, a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, connected to the terminal of the operating voltage source via a further transistor, Tai, individually associated to the matrix output line that has its control electrode connected to the output, ai, of an output amplifier circuit, Ai, that is individually associated to the matrix output line, the transistor series circuit, Tk-Te, of every switching element, Kij, having its switching transistor, Tk, connected to the matrix output line, zi.

Claim 7

A broadband signal switching matrix network having a cross-point matrix in FET technology, whose inputs, ej-sj, are each respectively provided with an input driver circuit, Ej, and whose outputs, zi-ai, are each respectively provided with an output amplifier circuit, Ai, and whose switching elements, Kij, respectively controlled by a holding memory cell, Hij, are respectively formed with a series circuit of a switching transistor, Tk, whose control electrode is charged with a through-connect signal or an inhibit signal and of an input transistor, Te, that has its control electrode connected to the appertaining matrix input line, sj, said series circuit having the main electrode of one of the transistors, Tk or Te, that is connected opposite from the series circuit, connected to the appertaining matrix output line, zi, whereby the matrix output line, zi, is connected to a pre-charging potential source via a pre-charging circuit, Tipc, that has an unlocking input connected to a clock signal line, T PC , having a pre-charging clock signal that defines a pre-charging phase, pv, of a bit through-connect time span subdivided into the pre-charging phase, pv, and into a remaining bit through-connect time span, so that the matrix output line, zi, is charged to a pre-charging potential in every pre-charging phase, pv, comprising a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, continuously connected to a terminal of an operating voltage source during both the pre-charging phase, pv, and the remaining bit through-connect time span, a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, connected to the terminal of the operating voltage source via a further transistor, Tai, individually associated to the matrix output line that has its control electrode connected to the output, ai, of an output amplifier circuit, Ai, that is individually associated to the matrix output line, the transistor series circuit, Tk-Te, of every switching element, Kij, having its switching transistor, Tk, connected to the matrix output line, zi.

Claim 8

A broadband signal switching matrix network having a cross-point matrix in FET technology, whose inputs, ej-sj, are each respectively provided with an input driver circuit, Ej, and whose outputs, zi-ai, are each respectively provided with an output amplifier circuit, Ai, and whose switching elements, Kij, respectively controlled by a holding memory cell, Hij, are respectively formed with a series circuit of a switching transistor, Tk, whose control electrode is charged with a through-connect signal or an inhibit signal and of an input transistor, Te, that has its control electrode connected to the appertaining matrix input line, sj, said series circuit having the main electrode of one of the transistors, Tk or Te, that is connected opposite from the series circuit, connected to the appertaining matrix output line, zi, whereby the matrix output line, zi, is connected to a pre-charging potential source via a pre-charging circuit, Tipc, that has an unlocking input connected to a clock signal line, T PC , having a pre-charging clock signal that defines a pre-charging phase, pv, of a bit through-connect time span subdivided into the pre-charging phase, pv, and into a remaining bit through-connect time span, so that the matrix output line, zi, is charged to a pre-charging potential in every pre-charging phase, pv, comprising a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, continuously connected to a terminal of an operating voltage source during both the pre-charging phase, pv, and the remaining bit through-connect time span, a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, connected to the terminal of the operating voltage source via a further transistor, Tai, individually associated to the matrix output line that has its control electrode connected to the output, ai, of an output amplifier circuit, Ai, that is individually associated to the matrix output line, the transistor series circuit, Tk-Te, of every switching element, Kij, having its input transistor, Te, connected to the matrix output line, zi.

Claim 9

A broadband signal switching matrix network having a cross-point matrix in FET technology, whose inputs, ej-sj, are each respectively provided with an input driver circuit, Ej, and whose outputs, zi-ai, are each respectively provided with an output amplifier circuit, Ai, and whose switching elements, Kij, respectively controlled by a holding memory cell, Hij, are respectively formed with a series circuit of a switching transistor, Tk, whose control electrode is charged with a through-connect signal or an inhibit signal and of an input transistor, Te, that has its control electrode connected to the appertaining matrix input line, sj, said series circuit having the main electrode of one of the transistors, Tk or Te, that is connected opposite from the series circuit, connected to the appertaining matrix output line, zi, whereby the matrix output line, zi, is connected to a pre-charging potential source via a pre-charging circuit, Tipc, that has an unlocking input connected to a clock signal line, T PC , having a pre-charging clock signal that defines a pre-charging phase, pv, of a bit through-connect time span subdivided into the pre-charging phase, pv, and into a remaining bit through-connect time span, so that the matrix output line, zi, is charged to a pre-charging potential in every pre-charging phase, pv, comprising a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, continuously connected to a terminal of an operating voltage source during both the pre-charging phase, pv, and the remaining bit through-connect time span, a main electrode of the other transistor of the transistors, Te or Tk, that is connected opposite the series circuit, connected to the terminal of the operating voltage source via a further transistor, Tai, individually associated to the matrix output line that has its control electrode connected to the output, ai, of an output amplifier circuit, Ai, that is individually associated to the matrix output line, the transistor series circuit, Tk-Te, of every switching element, Kij, having its input transistor, Te, connected to the matrix output line, zi.