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US5221643A
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Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen
Assignee: Siemens AG
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Filing: 1991-03-04
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Granted: 1993-06-22
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Expires: 2011-03-04
Abstract
Abstract A method for producing polycrystalline semiconductor material layers of, in particular, silicon by vapor phase deposition in a plasma reactor. Hydrogen in its activated condition is supplied to the reaction gas in the reactor through an additional gas feed. In an embodiment, the activation proceeds with a glow cathode located in the hydrogen gas feed. The method enables the deposition of uniform polycrystalline semiconductor material layers at substrate temperatures of from between approximately 100° to about 450° C. The deposition can be implemented onto normal glass substrates in a plasma reactor having a simple structure. The method can be used for the manufacture of transistors through thin-film technology.
Inventors
- 👤 Susanne Griep
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
128 words
A method for producing polycrystalline semiconductor material layers through plasma induced vapor deposition at low temperatures, wherein; activated hydrogen and a gaseous compound containing the semiconductor material are separately introduced into a reactor, the gaseous compound being silane (SiH 4 ) and the ratio of silane to hydrogen is set from approximately 1:10 to about 10:1; the semiconductor material is decomposed in a plasma-excited manner in the reactor and the semiconductor material is deposited on one or more substrates located in the reactor, wherein the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; and growth of amorphous material on the substrates is etched away and suppressed by the activated hydrogen thereby promoting uniform growth of layers of the polycrystalline semiconductor material.
Claim 2
Independent Claim
128 words
A method for producing polycrystalline semiconductor material layers through plasma induced vapor deposition at low temperatures, wherein; activated hydrogen and a gaseous compound containing the semiconductor material are separately introduced into a reactor, the gaseous compound being silane (SiH 4 ) and the ratio of silane to hydrogen is set from approximately 1:10 to about 10:1; the semiconductor material is decomposed in a plasma-excited manner in the reactor and the semiconductor material is deposited on one or more substrates located in the reactor, wherein the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; and growth of amorphous material on the substrates is etched away and suppressed by the activated hydrogen thereby promoting uniform growth of layers of the polycrystalline semiconductor material.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the activation of the hydrogen is achieved by ionization of the hydrogen in a hydrogen gas feed through the use of a glow cathode.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the activation of the hydrogen is achieved in a hydrogen gas feed through the use of microwaves.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein the activation of the hydrogen is achieved optically in a hydrogen gas feed with ultraviolet light having a suitable wavelength.
Claim 6
Independent Claim
137 words
A method for manufacturing semiconductor components based on silicon in thin-film technology comprising the steps of: decomposing a gaseous compound containing the semiconductor material in a plasma-induced manner in a reactor so that the semiconductor material is deposited on substrates located in the reactor, wherein the gaseous compound is silane (SiH 4 ) and the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; adding hydrogen in an activated condition to the plasma, the hydrogen being activated in a hydrogen gas feed that is separate from a reaction gas feed, and wherein the ratio of silane to hydrogen is set from approximately 1:10 to about 10:1; and suppressing growth of amorphous material on the substrates by the introduction of the activated hydrogen thereby promoting uniform growth of the polycrystalline semiconductor layers.
Claim 7
Independent Claim
137 words
A method for manufacturing semiconductor components based on silicon in thin-film technology comprising the steps of: decomposing a gaseous compound containing the semiconductor material in a plasma-induced manner in a reactor so that the semiconductor material is deposited on substrates located in the reactor, wherein the gaseous compound is silane (SiH 4 ) and the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; adding hydrogen in an activated condition to the plasma, the hydrogen being activated in a hydrogen gas feed that is separate from a reaction gas feed, and wherein the ratio of silane to hydrogen is set from approximately 1:10 to about 10:1; and suppressing growth of amorphous material on the substrates by the introduction of the activated hydrogen thereby promoting uniform growth of the polycrystalline semiconductor layers.
Claim 8
Dependent Claim
20 words
The method of claim 5 wherein the activation of the hydrogen is achieved through the use of a glow cathode.
Claim 9
Dependent Claim
15 words
The method of claim 5 wherein the activation of the hydrogen is achieved with microwaves.
Claim 10
Dependent Claim
17 words
The method of claim 5 wherein the activation of the hydrogen is achieved optically with ultraviolet light.
Claim 11
Independent Claim
140 words
A method for manufacturing transistors comprising producing polycrystalline semiconductor material layers in a method comprising the steps of: separately introducing a gaseous compound containing the semiconductor material and activated hydrogen into a reactor, the gaseous compound being silane (SiH 4 ); decomposing the gaseous compound containing the semiconductor material in a plasma-induced manner in the reactor so that the semiconductor material is deposited on substrates located in the reactor, wherein the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; adding the hydrogen in an activated condition to the plasma, the hydrogen being activated in a hydrogen gas feed that is separate from a reaction gas feed, the hydrogen being activated by aglow cathode located in the hydrogen gas feed; and setting the ratio of silane to hydrogen to approximately 1:10 to about 10:1.
Claim 12
Independent Claim
140 words
A method for manufacturing transistors comprising producing polycrystalline semiconductor material layers in a method comprising the steps of: separately introducing a gaseous compound containing the semiconductor material and activated hydrogen into a reactor, the gaseous compound being silane (SiH 4 ); decomposing the gaseous compound containing the semiconductor material in a plasma-induced manner in the reactor so that the semiconductor material is deposited on substrates located in the reactor, wherein the substrates are heated to a temperature of from approximately 100° C. to about 450° C.; adding the hydrogen in an activated condition to the plasma, the hydrogen being activated in a hydrogen gas feed that is separate from a reaction gas feed, the hydrogen being activated by aglow cathode located in the hydrogen gas feed; and setting the ratio of silane to hydrogen to approximately 1:10 to about 10:1.
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