Process for depositing amorphous silicon by low-temperature thermal decomposition, and apparatus for carrying out this process

Abstract

Abstract Amorphous silicon is deposited at low temperature by thermal decomposition of disilane which is produced upstream of the thermal reactor in the course of the same operation, preferably by a physicochemical method such as the action of atomic hydrogen on monosilane. The invention applies especially to deposition of doped or undoped amorphous silicon layers on substrates. <IMAGE>

Inventors

• 👤 Nicole Proust
• 👤 Pierre Landouar

Bibliographic Details