US4701343A
Expired / Lapsed
US
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Method of depositing thin films using microwave energy
Assignee: Energy Conversion Devices Inc
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Filing: 1986-08-13
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Granted: 1987-10-20
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Expires: 2006-08-13
Abstract
Abstract An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 David D. Allred
- 👤 Lee Walter
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:29
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/3222; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H01J37/32266; H01J37/32275; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
113 words
A process for depositing thin, non-single crystal films onto a substrate, comprising: providing a source of microwave energy; providing an enclosed reaction vessel; providing a substrate in said reaction vessel; coupling said microwave energy into said substantially enclosed reaction vessel containing said substrate; introducing into said vessel at least one reaction gas to form a glow discharge plasma within said vessel and to form reaction gas species from said reaction gas; and evacuating said reaction vessel to a deposition pressure of 0.1 torr or less so as to provide for the deposition of a film from said reaction gas species onto said substrate at high deposition rates with high reaction gas conversion efficiencies.
Claim 2
Dependent Claim
113 words
A process for depositing thin, non-single crystal films onto a substrate, comprising: providing a source of microwave energy; providing an enclosed reaction vessel; providing a substrate in said reaction vessel; coupling said microwave energy into said substantially enclosed reaction vessel containing said substrate; introducing into said vessel at least one reaction gas to form a glow discharge plasma within said vessel and to form reaction gas species from said reaction gas; and evacuating said reaction vessel to a deposition pressure of 0.1 torr or less so as to provide for the deposition of a film from said reaction gas species onto said substrate at high deposition rates with high reaction gas conversion efficiencies.
Claim 3
Dependent Claim
20 words
A process as defined in claim 1 wherein at least a semiconductor containing reaction gas is introduced into the vessel.
Claim 4
Dependent Claim
15 words
A process as defined in claim 1 wherein hydrogen is also introduced into the vessel.
Claim 5
Dependent Claim
20 words
A process as defined in claim 1 further comprising the step of introducing a plasma sustaining gas into the vessel.
Claim 6
Dependent Claim
14 words
A process as defined in claim 4 wherein said plasma sustaining gas is argon.
Claim 7
Dependent Claim
14 words
A process as defined in claim 4 wherein said plasma sustaining gas is hydrogen.
Claim 8
Dependent Claim
30 words
A process as defined in claim 2 wherein deposited film is a semiconductor having a band gap capable of promoting an electron from the valence to the conduction band thereof.
Claim 9
Dependent Claim
20 words
A process as defined in claim 7 wherein a wide band gap semiconductor containing gas is introduced into the vessel.
Claim 10
Dependent Claim
23 words
A process as defined in claim 8 wherein said wide band gap semiconductor reaction gas includes at least methane gas (CH 4 ).
Claim 11
Dependent Claim
25 words
A process as defined in claim 1 further including the step of maintaining the temperature of said substrate between about 20° Centigrade and 400° Centigrade.
Claim 12
Dependent Claim
34 words
A process as defined in claim 9 further including the step of adjusting the power output of said microwave energy source to provide power densities between about 0.1 to 1 watt per cubic centimeter.
Claim 13
Dependent Claim
17 words
A process as defined in claim 1 wherein the frequency of said microwave energy is 2.45 Gigahertz.
Claim 14
Dependent Claim
108 words
A process for depositing a thin film, non-single crystal layer of wide band gap, substantially transparent, hard, chemically inert material comprising: providing a source of microwave energy; providing an enclosed reaction vessel; providing a substrate in said reaction vessel; coupling said microwave energy into said substantially enclosed reaction vessel; introducing into said vessel at least one reaction gas to form a glow discharge plasma within sasid vessel and to form reaction gas species from said reaction gas; and evacuating said reaction vessel to a deposition pressure 0.1 torr or less so as to provide for the deposition of a transparent material from said reaction gases onto said substrate.
Claim 15
Dependent Claim
108 words
A process for depositing a thin film, non-single crystal layer of wide band gap, substantially transparent, hard, chemically inert material comprising: providing a source of microwave energy; providing an enclosed reaction vessel; providing a substrate in said reaction vessel; coupling said microwave energy into said substantially enclosed reaction vessel; introducing into said vessel at least one reaction gas to form a glow discharge plasma within sasid vessel and to form reaction gas species from said reaction gas; and evacuating said reaction vessel to a deposition pressure 0.1 torr or less so as to provide for the deposition of a transparent material from said reaction gases onto said substrate.
Claim 16
Dependent Claim
13 words
A process as defined in claim 13 wherein said reaction gas includes methane.
Claim 17
Dependent Claim
14 words
A process as defined in claim 14 wherein said reaction gas further includes hydrogen.
Claim 18
Dependent Claim
24 words
A process as defined in claim 13 including the step of continuing said deposition at least until said transparent material covers the subjacent surface.
Claim 19
Dependent Claim
51 words
A process as defined in claim 1 including the further step of selecting the reaction gases introduced into said vessel so as to deposit an insulating silicon alloy film, which film incorporates into the matrix thereof a material selected from the group consisting essentially of oxygen, nitrogen, carbon, and combinations thereof.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-10-19 | 1991-04-20 | 1991-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-19 | 1995-04-20 | 1995-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-19 | 1999-04-20 | 1999-10-20 | $7700.00 | Window Closed / Lapsed |