Abstract A method for manufacturing a semiconductor device providing steps of implanting impurity ions on the whole surface of a semiconductor substrate having a plurality of gate portions, in which side walls are formed on gate electrodes, by using the gate portions as masks, and then laminating a first insulating film, carrying out a first heat treatment to diffuse the impurities implanted in the substrate and to form an impurity diffusion layer between the gate portions, removing the first insulating film in a contact formation region which substantially includes the impurity diffusion layer, carrying out a second heat treatment to reduce crystal defects on the impurity diffusion layer and to laminate a second insulating film, which is made of the same material as that of the first insulating film, on the whole surface of the semiconductor substrate including the contact formation region again, and laminating a third insulating film on the whole surface and then carrying out a third heat treatment to flatten the surface.
A method for manufacturing a semiconductor device comprising steps of; (i) implanting impurity ions on the whole surface of a semiconductor substrate having a plurality of gate portions, in which side walls are formed on gate electrodes, by using the gate portions as masks, and then laminating a first insulating film over the gate portions and the substrate, (ii) carrying out a first heat treatment to diffuse the impurities implanted in the substrate and to form an impurity diffusion layer between the gate portions, (iii) removing the first insulating film in a contact formation region which substantially includes the impurity diffusion layer, (iv) carrying out a second heat treatment to reduce crystal defects on the impurity diffusion layer and laminating a second insulating film, which is made of the same material as that of the first insulating film, on the whole surface of the semiconductor substrate including the contact formation region again, and (v) laminating a third insulating film on the whole surface and then carrying out a third heat treatment to flatten the surface.
Claim 2
Independent Claim
175 words
A method for manufacturing a semiconductor device comprising steps of; (i) implanting impurity ions on the whole surface of a semiconductor substrate having a plurality of gate portions, in which side walls are formed on gate electrodes, by using the gate portions as masks, and then laminating a first insulating film over the gate portions and the substrate, (ii) carrying out a first heat treatment to diffuse the impurities implanted in the substrate and to form an impurity diffusion layer between the gate portions, (iii) removing the first insulating film in a contact formation region which substantially includes the impurity diffusion layer, (iv) carrying out a second heat treatment to reduce crystal defects on the impurity diffusion layer and laminating a second insulating film, which is made of the same material as that of the first insulating film, on the whole surface of the semiconductor substrate including the contact formation region again, and (v) laminating a third insulating film on the whole surface and then carrying out a third heat treatment to flatten the surface.
Claim 3
Dependent Claim
25 words
A method for manufacturing a semiconductor device according to claim 1, wherein the first insulating film is a Non-doped Silicate Glass film having no impurities.
Claim 4
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 1, wherein the first insulating film is removed by reactive ion etching.
Claim 5
Dependent Claim
41 words
A method for manufacturing a semiconductor device according to claim 1, wherein the second heat treatment is carried out for 10 to 30 minutes at a high temperature of 850° to 950° C. in a N 2 or HCl gas atmosphere.
Claim 6
Dependent Claim
39 words
A method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment is carried out for 40 to 60 minutes at a middle temperature of 750° to 850° C. in the N 2 gas atmosphere.