US5015593A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: Toshiba Corp
•
Filing: 1990-05-14
•
Granted: 1991-05-14
•
Expires: 2010-05-14
Abstract
Abstract In order to eliminate unwanted crystal defects generated by an ion implantation, a semiconductor substrate or an epitaxial layer, which is selectively subjected to an impurity ion implantation, is heat-treated in an inert gas atmosphere at 850° to 1050° C. to recrystallize the implanted region. Thereafter, the semiconductor substrate is heat-treated at 900° to 1250° C. in an atmosphere containing oxygen. For eliminating abnormal growth of grain boundaries in a polycrystalline semiconductor layer deposited on an insulating film the semiconductor layer is heat-treated at 900° to 1100° C. in an atmosphere containing oxygen. By applying at least one of these processes to usual fabrication methods, semiconductor devices with high reliabilty such as power MOSFETs will be provided.
Inventors
- 👤 Shigeo Yawata
- 👤 Kazuhisa Shibao
- 👤 Shun-ichi Hiraki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:47
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D30/60; H10D30/64; H10D30/66; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P30/21; H10P30/212; H10P30/28; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/17; H10P32/171; H10P36/00; H10P36/03; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/078; Y10S438/00; Y10S438/907; Y10S438/909
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulation film on a semiconductor substrate; depositing a polycrystalline semiconductor layer on said insulation film; patterning said polycrystalline semiconductor layer to a desired configuration; heat-treating for activation of the patterned polycrystalline semiconductor layer in an atmosphere containing oxygen at 900° to 1100° C.; ion-implanting a desired impurity into said semiconductor substrate through said insulation film; heat-treating said semiconductor substrate in an inert gas atmosphere at 805° to 1050° C. to recrystallize the ion-implanted region of said semiconductor substrate; and heat-treating said semiconductor substrate in an atmosphere at 900° to 1250° C. to diffuse the implanted impurity thereinto.
Claim 2
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulation film on a semiconductor substrate; depositing a polycrystalline semiconductor layer on said insulation film; patterning said polycrystalline semiconductor layer to a desired configuration; heat-treating for activation of the patterned polycrystalline semiconductor layer in an atmosphere containing oxygen at 900° to 1100° C.; ion-implanting a desired impurity into said semiconductor substrate through said insulation film; heat-treating said semiconductor substrate in an inert gas atmosphere at 805° to 1050° C. to recrystallize the ion-implanted region of said semiconductor substrate; and heat-treating said semiconductor substrate in an atmosphere at 900° to 1250° C. to diffuse the implanted impurity thereinto.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein said atmosphere for activation of the polycrystalline semiconductor layer is composed of a nitrogen gas containing oxygen.
Claim 4
Dependent Claim
24 words
The method according to claim 1, wherein said atmosphere for activation of the polycrystalline semiconductor layer is composed of an argon gas containing oxygen.
Claim 5
Dependent Claim
17 words
The method according to claim 1, wherein said inert gas atmosphere is composed of a nitrogen gas.
Claim 6
Dependent Claim
25 words
The method according to claim 1, wherein said inert gas atmosphere is composed of a mixed gas of a nitrogen gas and another inert gas.
Claim 7
Dependent Claim
16 words
The method according to claim 1, wherein the semiconductor device is comprised of a power MOSFET.
Claim 8
Dependent Claim
27 words
The method according to claim 1, wherein said atmosphere to diffuse the implanted impurity into said semiconductor substrate is composed of an inert gas atmosphere containing oxygen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |