Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the occurence of contamination at an interface between a semiconductor substrate and an insulating film by consisting the insulating film with a predetermined pattern which is provided on the surface of the semiconductor substrate as a mask wherein heat treatment is done in oxidized atmosphere after implanting an impurity ion. CONSTITUTION:A thermal oxide film 2 is formed on a silicon substrate 6 formed a base rigion 3 and after etching the film 2 with a predetermined pattern, a P+ implantation region 4 for emitter and high density phosphorus ion implantation layer 1 are formed by implanting a phosphorus ion. Next, for example, an SiO2 film 5 containing phosphorus is formed by heat treatment which is made for an hour at a relatively low temperature of 700-900 deg.C in damp oxygen. In this way, unnecessary contamination will be eliminated as the SiO2 film 5 is formed with an emitter or the like by a continuous process. And a crystal damage section goes with ion implantation will be eliminated as oxidation is made in the region showing slow velocity of propagation of crystal defect.

Inventors

• 👤 Kunihiro Yagi
• 👤 Masao Tamura
• 👤 Shizunori Ooyu
• 👤 Takashi Tokuyama
• 👤 Keizo Inaba
• 👤 Yoshikazu Yanagi

Bibliographic Details