US5217566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Densifying and polishing glass layers
Assignee: LSI Corp
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Filing: 1991-08-26
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Granted: 1993-06-08
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Expires: 2011-08-26
Abstract
Abstract A glass passivation layer is deposited, densified and polished. Thereby an underlying wafer containing substantially defined devices is exposed to a temperature cycle that is sufficient for densification of the glass, and no more. Reflow and its attendant additional temperature cycle are thereby avoided, allowing for smaller, faster devices to be fabricated. Increased control over the ultimate thickness of the glass layer is also provided.
Inventors
- 👤 Nicholas F. Pasch
- 👤 Roger Patrick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:14
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0186; H10D84/02; H10D84/03; H10D84/038; H10P; H10P30/00; H10P30/20; H10P30/22; H10P95/00; H10P95/06; H10P95/062; H05; H05K; H05K1/00; H05K1/02; H05K1/11; H05K1/115; H05K3/00; H05K3/46; H05K3/4644
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A method of applying a glass passivation layer over a silicon wafer containing underlying substantially defined semiconductor devices comprising: depositing a passivation layer of glass over a silicon wafer containing underlying substantially defined semiconductor devices at a temperature of about 700°-800° C.; densifying the glass layer at a temperature of approximately 800° C.; and polishing the glass layer; thereby forming a substantially planar glass passivation layer without reflowing the glass layer.
Claim 2
Independent Claim
71 words
A method of applying a glass passivation layer over a silicon wafer containing underlying substantially defined semiconductor devices comprising: depositing a passivation layer of glass over a silicon wafer containing underlying substantially defined semiconductor devices at a temperature of about 700°-800° C.; densifying the glass layer at a temperature of approximately 800° C.; and polishing the glass layer; thereby forming a substantially planar glass passivation layer without reflowing the glass layer.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein: the glass passivation layer is deposited and densified with a total temperature cycle limited to temperatures required to deposit and densify the glass.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein: the glass passivation layer is polished by chemi-mechanical polishing.
Claim 5
Dependent Claim
38 words
A method according to claim 1, wherein: one or more "subsequent" glass passivation layers are applied over the passivation layer; and the steps of depositing, densifying and polishing are repeated for each of the "subsequent" glass passivation layers.
Claim 6
Independent Claim
73 words
A method of applying a glass passivation layer over a silicon wafer containing underlying substantially defined semiconductor devices consisting essentially of: depositing a passivation layer of glass over a silicon wafer containing underlying substantially defined semiconductor devices at a temperature of about 700°-800° C.; densifying the glass layer at a temperature of approximately 800° C.; and polishing the glass layer; thereby forming a substantially planar glass passivation layer without reflowing the glass layer.
Claim 7
Independent Claim
73 words
A method of applying a glass passivation layer over a silicon wafer containing underlying substantially defined semiconductor devices consisting essentially of: depositing a passivation layer of glass over a silicon wafer containing underlying substantially defined semiconductor devices at a temperature of about 700°-800° C.; densifying the glass layer at a temperature of approximately 800° C.; and polishing the glass layer; thereby forming a substantially planar glass passivation layer without reflowing the glass layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-07 | 1996-12-07 | 1997-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-07 | 2000-12-07 | 2001-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-07 | 2004-12-07 | 2005-06-08 | $7700.00 | Window Closed / Lapsed |