US5214306A
Expired / Lapsed
US
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Light emitting diode
Assignee: Sanyo Electric Co Ltd
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Filing: 1992-01-22
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Granted: 1993-05-25
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Expires: 2012-01-22
Abstract
Abstract A light emitting diode composed of a compound semiconductor containing aluminum having a GaAlAs layer and the like and having a structure which is superior in humidity resistance and has a long life. For example, in a double hetero light emitting diode constructed by comprising a p-GaAlAs layer, an n-GaAlAs layer, and an active layer interposed between both the GaAlAs layers, an oxide layer containing the oxide of gallium is provided inside of the surface excluding a portion where an electrode is provided of its semiconductor device, so that the surface of the device is stabilized. On the other hand, in the structure of a light emitting diode in which stepped portions are provided in the peripheral part of its semiconductor device, an oxide layer is provided inside of the surface of the device and inside of the peripheral part, and an insulating layer is formed on the oxide layer on the surface of the device.
Inventors
- 👤 Masayasu Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:43
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/81; H10H20/819; H10H20/82; H10H20/83; H10H20/831; H10H20/01; H10H20/032
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
63 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrode provided on an upper surface and a lower surface of said semiconductor device; and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided.
Claim 2
Dependent Claim
63 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrode provided on an upper surface and a lower surface of said semiconductor device; and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided.
Claim 3
Dependent Claim
33 words
The light emitting diode according to claim 1, wherein the structure of the semiconductor device is of one of a single hetero type, a double hetero type and a homo PN junction type.
Claim 4
Dependent Claim
38 words
The light emitting diode according to claim 1, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 50 to 95%.
Claim 5
Dependent Claim
38 words
The light emitting diode according to claim 1, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 80 to 95%.
Claim 6
Dependent Claim
23 words
The light emitting diode of claim 1 wherein said thermal oxide layer is formed by annealing said upper surface of said semiconductor device.
Claim 7
Dependent Claim
78 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrodes provided on an upper surface and a lower surface of said semiconductor device; and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided; and an insulating layer formed on said thermal oxide layer of said upper surface part.
Claim 8
Dependent Claim
78 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrodes provided on an upper surface and a lower surface of said semiconductor device; and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided; and an insulating layer formed on said thermal oxide layer of said upper surface part.
Claim 9
Dependent Claim
33 words
The light emitting diode according to claim 6, wherein the structure of the semiconductor device is of one of a single hetero type, a double hetero type and a homo PN junction type.
Claim 10
Dependent Claim
38 words
The light emitting diode according to claim 6, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 50 to 95%.
Claim 11
Dependent Claim
38 words
The light emitting diode according to claim 6, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 80 to 95%.
Claim 12
Dependent Claim
23 words
The light emitting diode of claim 6 wherein said thermal oxide layer is formed by annealing said upper surface of said semiconductor device.
Claim 13
Dependent Claim
79 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrodes provided on an upper surface and a lower surface of said semiconductor device; stepped portions provided in the peripheral part of said semiconductor device, and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided and at said stepped portions.
Claim 14
Dependent Claim
79 words
A light emitting diode comprising: a semiconductor device having a plurality of GaAlAs layers sequentially formed; an electrodes provided on an upper surface and a lower surface of said semiconductor device; stepped portions provided in the peripheral part of said semiconductor device, and a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said upper surface of said semiconductor device excluding a portion where the electrode is provided and at said stepped portions.
Claim 15
Dependent Claim
33 words
The light emitting diode according to claim 11, wherein the structure of the semiconductor device is of one of a single hetero type, a double hetero type and a homo PN junction type.
Claim 16
Dependent Claim
38 words
The light emitting diode according to claim 11, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 50 to 95%.
Claim 17
Dependent Claim
38 words
The light emitting diode according to claim 11, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 80 to 95%.
Claim 18
Dependent Claim
23 words
The light emitting diode of claim 11 wherein said thermal oxide layer is formed by annealing said upper surface of said semiconductor device.
Claim 19
Dependent Claim
76 words
A light emitting diode comprising: a semiconductor device having plurality of GaAlAs layers sequentially formed; an electrode provided on an upper surface and a lower surface of said semiconductor device; stepped portions provided in the peripheral part of said semiconductor device; a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said stepped portions; and an insulating layer formed on said thermal oxide layer provided at the upper surface part.
Claim 20
Dependent Claim
76 words
A light emitting diode comprising: a semiconductor device having plurality of GaAlAs layers sequentially formed; an electrode provided on an upper surface and a lower surface of said semiconductor device; stepped portions provided in the peripheral part of said semiconductor device; a thermal oxide layer containing the oxides of gallium, aluminum and arsenic formed from and at said stepped portions; and an insulating layer formed on said thermal oxide layer provided at the upper surface part.
Claim 21
Dependent Claim
33 words
The light emitting diode according to claim 16, wherein the structure of the semiconductor device is of one of a single hetero type, a double hetero type and a homo PN junction type.
Claim 22
Dependent Claim
38 words
The light emitting diode according to claim 16, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 50 to 95%.
Claim 23
Dependent Claim
38 words
The light emitting diode according to claim 16, wherein the average oxidation rate of the device at a depth of 0.01 μm from said upper surface of the device in said thermal oxide layer is 80 to 95%.
Claim 24
Dependent Claim
23 words
The light emitting diode of claim 16 wherein said thermal oxide layer is formed by annealing said upper surface of said semiconductor device.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
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