US4723253A
Expired / Lapsed
US
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Semiconductor laser array
Assignee: Sharp Corp
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Filing: 1985-05-06
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Granted: 1988-02-02
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Expires: 2005-05-06
Abstract
Abstract A semiconductor laser array includes a plurality of stripe-shaped stimulated regions of the index guide type. A plurality of buried layers are disposed between each of the plurality of stripe-shaped stimulated regions. A light absorption layer is formed in each of the plurality of stripe-shaped stimulated regions so that the stimulated region has the optical loss greater than an buried layer, whereby optical coupling is performed with no phase difference.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/30; H01S5/32; H01S5/4081; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/227; H01S5/2275; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
108 words
A semiconductor element in a semiconductor laser array comprising: a semiconductor substrate; a plurality of stripe-shaped stimulated regions of an index guide type formed on said semiconductor substrate; a plurality of buried layers, a buried layer being disposed between adjacent ones of said plurality of stripe-shaped stimulated regions, wherein said plurality of stripe-shaped stimulated regions comprise a light absorption layer so that said plurality of stripe-shaped stimulated regions have an optical loss greater than an optical loss of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions; and a second electrode formed on a bottom surface of said semiconductor substrate.
Claim 2
Dependent Claim
108 words
A semiconductor element in a semiconductor laser array comprising: a semiconductor substrate; a plurality of stripe-shaped stimulated regions of an index guide type formed on said semiconductor substrate; a plurality of buried layers, a buried layer being disposed between adjacent ones of said plurality of stripe-shaped stimulated regions, wherein said plurality of stripe-shaped stimulated regions comprise a light absorption layer so that said plurality of stripe-shaped stimulated regions have an optical loss greater than an optical loss of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions; and a second electrode formed on a bottom surface of said semiconductor substrate.
Claim 3
Dependent Claim
146 words
A semiconductor laser array comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; a plurality of stripe-shaped stimulated regions formed on said second cladding layer, each of said plurality of stripe-shaped stimulated regions including: a light absorption layer formed on said second cladding layer; a third cladding layer formed on said light absorption layer; and a cap layer formed on said third cladding layer; a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said semiconductor substrate.
Claim 4
Dependent Claim
146 words
A semiconductor laser array comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; a plurality of stripe-shaped stimulated regions formed on said second cladding layer, each of said plurality of stripe-shaped stimulated regions including: a light absorption layer formed on said second cladding layer; a third cladding layer formed on said light absorption layer; and a cap layer formed on said third cladding layer; a plurality of buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said semiconductor substrate.
Claim 5
Dependent Claim
219 words
A GaAlAs semiconductor laser array comprising: an n-GaAs substrate; an n-Ga 0 .6 Al 0 .4 As cladding layer formed on said n-GaAs substrate; a p-Ga 0 .9 Al 0 .1 As active layer formed on said n-Ga 0 .6 Al 0 .4 As cladding layer; a p-Ga 0 .6 Al 0 .4 As cladding layer formed on said p-Ga 0 .9 Al 0 .1 As active layer; a plurality of stripe-shaped stimulated regions formed on said p-Ga 0 .6 Al 0 .4 As cladding layer, each of said plurality of stripe-shaped stimulated regions including: p-GaAs light absorption layer formed on said p-Ga 0 .6 Al 0 .4 As cladding layer; a p-Ga 0 .6 Al 0 .4 As cladding layer formed on said p-GaAs light absorption layer; and a p-GaAs cap layer formed on said p-Ga 0 .6 Al 0 .4 As cladding layer; a plurality of n-Ga 0 .5 Al 0 .5 As buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of n-Ga 0 .5 AL 0 .5 As buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said n-GaAs substrate.
Claim 6
Dependent Claim
219 words
A GaAlAs semiconductor laser array comprising: an n-GaAs substrate; an n-Ga 0 .6 Al 0 .4 As cladding layer formed on said n-GaAs substrate; a p-Ga 0 .9 Al 0 .1 As active layer formed on said n-Ga 0 .6 Al 0 .4 As cladding layer; a p-Ga 0 .6 Al 0 .4 As cladding layer formed on said p-Ga 0 .9 Al 0 .1 As active layer; a plurality of stripe-shaped stimulated regions formed on said p-Ga 0 .6 Al 0 .4 As cladding layer, each of said plurality of stripe-shaped stimulated regions including: p-GaAs light absorption layer formed on said p-Ga 0 .6 Al 0 .4 As cladding layer; a p-Ga 0 .6 Al 0 .4 As cladding layer formed on said p-GaAs light absorption layer; and a p-GaAs cap layer formed on said p-Ga 0 .6 Al 0 .4 As cladding layer; a plurality of n-Ga 0 .5 Al 0 .5 As buried layers disposed between each of said plurality of stripe-shaped stimulated regions; a plurality of oxide films formed on each of said plurality of n-Ga 0 .5 AL 0 .5 As buried layers; a first electrode formed commonly on said plurality of stripe-shaped stimulated regions and said plurality of oxide films; and a second electrode formed on the bottom surface of said n-GaAs substrate.
Claim 7
Dependent Claim
40 words
The semiconductor element of claim 1 wherein each of said plurality of stripe-shaped stimulated regions formed on said semiconductor substrate further comprise: a cladding layer disposed on said light absorption layer; and a cap layer formed on said cladding layer.
Claim 8
Dependent Claim
26 words
The semiconductor element of claim 4 further comprising a plurality of oxide films each oxide film being disposed on one of said plurality of buried layers.
Claim 9
Dependent Claim
25 words
The semiconductor laser array of claim 2 wherein said third cladding layer has a refractive index greater than each of said plurality of buried layers.
Claim 10
Dependent Claim
29 words
The semiconductor laser array of claim 2 wherein each of said stripe-shaped stimulated regions have an optical loss greater than an optical loss of said plurality of buried layers.
Claim 11
Dependent Claim
23 words
The semiconductor laser array of claim 2 wherein each of said plurality of buried layers includes n-Ga 0 .5 Al 0 .5 As.
Claim 12
Dependent Claim
23 words
The semiconductor laser array of claim 2 wherein each of said plurality of buried layers includes p-Ga 0 .5 Al 0 .5 As.
References Cited (Backward Citations)
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EP0029167A1
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EP0045862A1
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EP0064339A1
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US4603421A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-01 | 1991-08-03 | 1992-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-01 | 1995-08-03 | 1996-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-01 | 1999-08-03 | 2000-02-02 | $7700.00 | Window Closed / Lapsed |