Integrated quantum well lasers for wavelength division multiplexing

Claim 1

An integrated array of quantum well lasers which has a plurality of quantum well lasers for providing a plurality of light beams each having a different but known wavelength for use in wavelength division multiplexing comprising: a single crystal semiconductor substrate having simultaneously grown thereon from a single growth sequence a plurality of compositionally identical epitaxial layers to form quantum well heterostructure lasers, each of said plurality of quantum well lasers comprising: a first cladding region grown on said substrate; an active region of a determined thickness which includes alternating thin layers of narrow band-gap well layers and wide band-gap barrier layers followed by a final narrow band-gap well layer successively grown on said first cladding region, wherein said determined thickness is different from one to the next of said plurality of quantum well lasers; and a second cladding region grown on said active region, each of said quantum well lasers being electrically and optically isolated.