EP0010949A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Xerox Corp
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Filing: 1979-10-30
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Granted: —
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Expires: 1999-10-30
Abstract
Abstract A semiconductor laser (10) produces a plurality of spatially displaced emitting portions or cavities (33) in an active layer (16) of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means (38) are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.
Inventors
- 👤 Donald R. Scifres
- 👤 William Streifer
- 👤 Robert D. Burnham
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 14:55
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
135 words
A semiconductor laser (10, 51, 60, 90) comprising one or more layers (14, 16, 18, 20; 64, 66, 68, 70; 94, 96, 98, 100) of semiconductor material on a substrate (12, 62, 92) one of said layers forming an active layer (16, 66, 96) for light wave propagation and generation under lasing conditions and a plurality of emitting cavities (33, 82, 91) established in said active layer (16, 66, 96), characterized by deflection means (38, 59, 80, 103) etc in the laser whereby said light waves produced in one portion of said active layer (16) 66, 96) are deflected into one or more adjacent emitting cavities of said active layer, said deflection means being provided by a refractive index change with which said light wave interacts while said light wave is within said deflection means.
Claim 2
Dependent Claim
135 words
A semiconductor laser (10, 51, 60, 90) comprising one or more layers (14, 16, 18, 20; 64, 66, 68, 70; 94, 96, 98, 100) of semiconductor material on a substrate (12, 62, 92) one of said layers forming an active layer (16, 66, 96) for light wave propagation and generation under lasing conditions and a plurality of emitting cavities (33, 82, 91) established in said active layer (16, 66, 96), characterized by deflection means (38, 59, 80, 103) etc in the laser whereby said light waves produced in one portion of said active layer (16) 66, 96) are deflected into one or more adjacent emitting cavities of said active layer, said deflection means being provided by a refractive index change with which said light wave interacts while said light wave is within said deflection means.
Claim 3
Dependent Claim
19 words
The laser of Claim 1 wherein said refractive index change is provided by an impurity profile (53, 57, 59).
Claim 4
Dependent Claim
23 words
The laser of Claim 1 wherein said refractive index change is provided by the injected charge distribution determined by current confining means (28).
Claim 5
Dependent Claim
17 words
The laser of Claim 1 wherein said refractive index change is provided by a material composition change.
Claim 6
Dependent Claim
17 words
The laser of Claim 1 wherein said refractive index change is provided by a material thickness change.
Claim 7
Dependent Claim
36 words
The laser of Claim 1 wherein said deflection means is a plurality of current confining channels (76), each of said current confining channels being coupled to an adjacent channel by an interconnecting current confining channel (80).
Claim 8
Dependent Claim
20 words
The laser of Claim 1 wherein said deflection means (146) is a grating pattern in proximity to said active layer.
Claim 9
Dependent Claim
18 words
The laser of any one of Claims 1 to 7 wherein said cavities (33, 82, 91) are parallel.
Claim 10
Dependent Claim
20 words
The laser of any one of Claims 1 to 7 wherein said cavities are angularly disposed relative to each other.
Claim 11
Dependent Claim
20 words
The laser of any one of Claims 1 to 7 wherein said cavities are unequally spaced relative to each other.
References Cited (Backward Citations)
No citation records indexed.
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