EP0064339A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Hitachi Ltd
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Filing: 1982-04-14
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Granted: —
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Expires: 2002-04-14
Abstract
Abstract A semiconductor laser device has an active layer (3) between cladding layers (2; 4, 6). To phase-lock the laser emissions and thus give high power laser output which can be condensed and collimated, one of the cladding layers (4, 6) is provided with strip-like optical absorption regions (5) arranged in a direction intersecting the direction of travel of , the laser light. This causes a variation of a complex refractive index for the laser beam, and local emissions of adjacent lasers give rise to a non-linear interaction therebetween.
Inventors
- 👤 Jun-Ichi Umeda
- 👤 Hisao Nakashima
- 👤 Takashi Kajimura
- 👤 Takao Kuroda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:50
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
97 words
A semiconductor laser device comprising a semiconductor assembly for optical confinement which includes an active layer (3) and cladding layers (2; 4, 6), electrodes (8, 9) connected thereto, and means (10) forming an optical resonator; characterised in that means (5; 11; 12; 14; 12, 14, 15) which, in effect, causes a variation of a complex refractive index for a laser beam in a direction intersecting with the direction of travel of the laser beam is disposed over or under said active layer (3), and that local emissions of adjacent lasers give rise to a nonlinear interaction therebetween.
Claim 2
Dependent Claim
97 words
A semiconductor laser device comprising a semiconductor assembly for optical confinement which includes an active layer (3) and cladding layers (2; 4, 6), electrodes (8, 9) connected thereto, and means (10) forming an optical resonator; characterised in that means (5; 11; 12; 14; 12, 14, 15) which, in effect, causes a variation of a complex refractive index for a laser beam in a direction intersecting with the direction of travel of the laser beam is disposed over or under said active layer (3), and that local emissions of adjacent lasers give rise to a nonlinear interaction therebetween.
Claim 3
Dependent Claim
45 words
A semiconductor laser device as defined in claim 1, characterised in that said means for forming a variation of a complex refractive index provides a plurality of regions (5; 11; 14) discretely arranged in said direction intersecting the direction of travel of the laser beam.
Claim 4
Dependent Claim
56 words
A semiconductor laser device as defined in claim 2, characterised in that said regions which, in effect, cause a variation of a complex refractive index for a laser beam are constructed of a plurality of strip-like semiconductor layers (5, 11) which are parallel to the travelling direction of said laser beam and which are cyclically arrayed.
Claim 5
Dependent Claim
52 words
A semiconductor laser device as defined in claim 2, characterised in that said regions which, in effect, cause a variation of a complex refractive index for a laser beam are constructed of strip-like semiconductor islands (5) which are parallel to the travelling direction of said laser beam and which are cyclically arrayed.
Claim 6
Dependent Claim
98 words
A semiconductor laser device as defined in claim 2, characterised in that said means which, in effect, causes a variation of a complex refractive index for a laser beam is constructed of a semiconductor material layer (2, 12; 2, 1.2, 15) which, in effect, causes a variation of a complex refractive index for a laser beam and in which regions (14) of a shorter distance to said active layer through the semiconductor layer and regions of a longer distance exist alternately in a sectional structure in a plane perpendicular to the direction of travel of said laser beam.
Claim 7
Dependent Claim
55 words
A semiconductor laser device as defined in any one of claims 1 to 4 wherein said means (5) for causing variation of a complex refractive index is disposed in the cladding layer (4, 6 ) on the side of the active layer (3) remote from a substrate (1) on which said semiconductor assembly is constructed.
Claim 8
Dependent Claim
58 words
A semiconductor laser device as defined in any one of claims 1 to 5 wherein said means (11; 12, 14; 12, 14, 15) for causing variation of a complex refractive index is disposed in the cladding layer (2) on the side of the active layer (3) closest to a substrate (1) on which said semiconductor assembly is constructed.
References Cited (Backward Citations)
US4185256A
Cited
EP0010949A2
Cited
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