Patent US5211796A successfully refreshed from Google Patents.
US5211796A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for performing in-situ etch of CVD chamber
Assignee: LSI Corp
•
Filing: 1991-12-12
•
Granted: 1993-05-18
•
Expires: 2011-12-12
Abstract
Abstract Walls of a CVD chamber are automatically controlled to be heated to above 65 DEG C. during etching of the chamber walls with NF3. Any condensation of reaction products on the chamber walls is avoided, since, at the relatively high chamber wall temperature, these reaction products are volatile and are purged away with the NF3. The apparatus is programmed to automatically carry out this heating and gas injecting process.
Inventors
- 👤 Keith J. Hansen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/44; C23C16/4401; C23C16/4402; C23C16/4405; C23C16/455; C23C16/45561; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/052; H10W20/0526; Y; Y10; Y10S; Y10S156/00; Y10S156/916
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
92 words
An apparatus for performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber, said apparatus comprising: a closed loop heating unit for heating walls of said chamber in said cold-wall processing system to a temperature between approximately 65° C. and approximately 90° C.; means for injecting a fluorine-based etching gas into said chamber; and means for controlling said means for heating and said means for injecting so that in-situ etching of said chamber is conducted at between approximately 65° C. and approximately 90° C.
Claim 2
Independent Claim
92 words
An apparatus for performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber, said apparatus comprising: a closed loop heating unit for heating walls of said chamber in said cold-wall processing system to a temperature between approximately 65° C. and approximately 90° C.; means for injecting a fluorine-based etching gas into said chamber; and means for controlling said means for heating and said means for injecting so that in-situ etching of said chamber is conducted at between approximately 65° C. and approximately 90° C.
Claim 3
Dependent Claim
46 words
The apparatus of claim 1 further comprising a means for supplying RF power to energize said NF 3 gas to etch said walls of said chamber, and where said means programmed for automatically controlling also is programmed for automatically controlling said means for supplying RF power.
Claim 4
Dependent Claim
19 words
The apparatus of claim 2 further comprising means for maintaining pressure in said chamber to below approximately 80 mtorr.
References Cited (Backward Citations)
US4147571A
Cited
US4595453A
Cited
US4811684A
Cited
US4653428A
Cited
US4749440A
Cited
US4709655A
Cited
US4795880A
Cited
US4786352A
Cited
US4816113A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-17 | 1996-11-16 | 1997-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-17 | 2000-11-16 | 2001-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-17 | 2004-11-16 | 2005-05-18 | $7700.00 | Window Closed / Lapsed |