Use of organometallic compounds to deposit thin films from the gas phase

Claim 1

In a process for the deposition of epitactic layers employing an organometallic compound for the deposition of thin films or layers form the gas phase, the improvement comprising said organometallic compound being a compound of formula I (R.sup.1).sub.3-n M--Y.sub.n I, wherein M is aluminum, alllium or indium; n is 1, 2 or 3; Y is --NR 2 R 3 , --RP 2 R 3 , --ASR 2 R 3 ; R 1 , R 2 , R 4 and R 5 , in each case independently of one another, are H, an alkyl group having 1-8 C atoms, where the alkyl group may be partly or fully fluorinated, a cycloalkyl, alkenyl or cycloalkenyl group, in each case having 3-8 C atoms, or an aryl group, R 1 is alternatively 1,2--(CH 2 ) p --C 6 H 4 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 6 H 10 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 6 H 8 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 6 H 6 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 5 H 8 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 5 H 6 --(CH 2 ) q --Z, 1,2--(CH 2 ) p --C 5 H 4 --(CH 2 ) q --Z, or 1,2--(CH 2 ) p --C 4 H 6 --(CH 2 ) q --Z; p and q, in each case independently of one another, are 0, 1, 2 or 3; Z is --NR 4 R 5 , --PR 4 R 5 , --AsR 4 R 5 or --SbR 4 R 5 ; and is a branched alkyl or alkenyl group, in each case having 3-8 C atoms, it being possible for these groups to be partly or fully fluorinated, a cycloalkyl or cycloalkenyl group, in each case having 3,-8 C atoms, or an aryl group.