EP0251555A1
Expired / Lapsed
EP
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Gallium Hydride/trialkylamine adducts, and their use in deposition of III-V compound films
Assignee: ATK Launch Systems LLC
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Filing: 1987-06-16
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Granted: —
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Expires: 2007-06-16
Abstract
Abstract Adduct of the formula H₃GaNR₃ wherein each R is independently selected from lower alkyl groups having at least 2 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gallium. Arsenic and phosphorus compounds can also be added for deposition gallium compounds of those elements. The process can also be performed using the analogous trimethylamine adduct.
Inventors
- 👤 Norbert Braunagel
- 👤 Andreas A. Melas
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:43
CPC Classifications
C; C07; C07F; C07F5/00; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C07F5/003
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
22 words
A compound of the formula: H₃GaHR wherein each R / is independently selected from alkyl groups having at least 2 carbon atoms.
Claim 2
Dependent Claim
22 words
A compound of the formula: H₃GaHR wherein each R / is independently selected from alkyl groups having at least 2 carbon atoms.
Claim 3
Dependent Claim
11 words
An adduct according to claim 1, wherein each R is ethyl.
Claim 4
Independent Claim
67 words
A method for depositing a gallium nitride film on a substrate, comprising the steps of: A. selecting a source compound an adduct of the formula: H₃GaNR₃ wherein each R is independently an alkyl group preferably a C₁-C₄alkyl group: B. conveying said source compound to a deposition chamber containing said substrate; and C. decomposing the source compound in the deposition chamber, thereby depositing gallium nitride on the substrate.
Claim 5
Independent Claim
67 words
A method for depositing a gallium nitride film on a substrate, comprising the steps of: A. selecting a source compound an adduct of the formula: H₃GaNR₃ wherein each R is independently an alkyl group preferably a C₁-C₄alkyl group: B. conveying said source compound to a deposition chamber containing said substrate; and C. decomposing the source compound in the deposition chamber, thereby depositing gallium nitride on the substrate.
Claim 6
Dependent Claim
27 words
A method according to claim 3 wherein said conveying step is carried out by entraining the source compound on a stream of a carrier gas comprising nitrogen.
Claim 7
Dependent Claim
13 words
A method according to claim 4, wherein the carrier gas further comprises hydrogen.
Claim 8
Dependent Claim
18 words
A method according to claim 5, wherein the carrier gas consists essentially of 90% nitrogen and 10% hydrogen.
Claim 9
Independent Claim
24 words
A method according to any one of claims 3 to 6, wherein the deposition chamber is maintained at a temperature of 300°C to 1000°C.
Claim 10
Independent Claim
22 words
A method according to any of claims 3 to 7, wherein the substrate is selected from silicon, gallium arsenide, and indium phosphide.
Claim 11
Independent Claim
102 words
A method for depositing a gallium - Group V film on a substrate, comprising the steps of: A. selecting as a gallium source compound an adduct of the formula: H₃GaNR₃ wherein each R is independently an alkyl group, preferably a C₁ - C₄ alkyl group; B. selecting a Group V source compound; C. conveying the gallium source compound and the Group V source compound to a deposition chamber containing the substrate; and D. decomposing and reacting the gallium source compound and the Group V source compound in the deposition chamber, thereby depositing a gallium - Group V compound film on the substrate.
Claim 12
Independent Claim
102 words
A method for depositing a gallium - Group V film on a substrate, comprising the steps of: A. selecting as a gallium source compound an adduct of the formula: H₃GaNR₃ wherein each R is independently an alkyl group, preferably a C₁ - C₄ alkyl group; B. selecting a Group V source compound; C. conveying the gallium source compound and the Group V source compound to a deposition chamber containing the substrate; and D. decomposing and reacting the gallium source compound and the Group V source compound in the deposition chamber, thereby depositing a gallium - Group V compound film on the substrate.
Claim 13
Dependent Claim
24 words
A method according to claim 9, wherein the Group V source compound is phosphine and the gallium - Group V film is gallium phosphide.
Claim 14
Dependent Claim
24 words
A method according to claim 9, wherein the Group V source compound is arsine and the gallium - Group V film is gallium arsenide.
References Cited (Backward Citations)
FR2356271A1
Cited
US4250205A
Cited
US4204893A
Cited
US4279670A
Cited
EP0174743A2
Cited
WO1986002776A1
Cited
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