EP0331448A2
Expired / Lapsed
EP
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Forming aluminium nitride films
Assignee: National Research Development Corp UK
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Filing: 1989-02-28
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Granted: —
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Expires: 2009-02-28
Abstract
Abstract Aluminium nitride films are formed in a simple reactor comprising an evaporation chamber held at a temperature between 80°C and 150°C, connected to a reactor containing substrates on-which film deposition is required, heated to a higher temperature between 500°C and 900°C. The evaporation chamber contains a vapour of the novel compound (CH₃)₂-Al-N-(isopropyl)₂, which decomposes on reaching the heated substrates to release Al and M as AlN films.
Inventors
- 👤 Donald Charlton Bradley
- 👤 Dariello Marcello Frigo
- 👤 Eric Alfred Dutton/deceased White
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:12
CPC Classifications
C; C07; C07F; C07F5/00; C07F5/06; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C07F5/061; C07F5/066
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
19 words
A compound where R¹ is methyl, ethyl or n-propyl and R² is hydrogen, propyl, sec-butyl, tertiary butyl or aryl.
Claim 2
Dependent Claim
19 words
A compound where R¹ is methyl, ethyl or n-propyl and R² is hydrogen, propyl, sec-butyl, tertiary butyl or aryl.
Claim 3
Dependent Claim
10 words
A compound according to Claim 1, wherein R¹ is methyl.
Claim 4
Dependent Claim
12 words
A compound according to Claim 1 or 2, wherein R² is isopropyl.
Claim 5
Dependent Claim
2 words
The compound
Claim 6
Dependent Claim
2 words
The compound
Claim 7
Dependent Claim
13 words
A compound being a polymer of a compound according to any preceding claim.
Claim 8
Independent Claim
33 words
A method of forming a layer of aluminium nitride on a substrate, comprising heating the substrate to a compound-decomposition temperature and exposing it to a vapour of one or more compounds containing aluminium.
Claim 9
Independent Claim
33 words
A method of forming a layer of aluminium nitride on a substrate, comprising heating the substrate to a compound-decomposition temperature and exposing it to a vapour of one or more compounds containing aluminium.
Claim 10
Dependent Claim
15 words
A method according to Claim 6, wherein the vapour contains no other compounds containing aluminium.
Claim 11
Dependent Claim
17 words
A method according to Claim 6 or 7, wherein the vapour contains no other compounds containing nitrogen.
Claim 12
Dependent Claim
13 words
A method according to Claim 6, wherein the vapour contains no other reactant.
Claim 13
Dependent Claim
13 words
A method according to Claim 6, wherein the vapour contains substantially nothing else.
Claim 14
Independent Claim
23 words
A method according to any of Claims 6 to 10 wherein the vapour is generated by heating the compound at 70°C to 150°C.
Claim 15
Independent Claim
23 words
A method according to any of Claims 6 to 11, wherein the substrate is held at a temperature of from 500°C to 900°C.
Claim 16
Dependent Claim
14 words
A method according to Claim 14, wherein the substrate temperature is up to 800°C
Claim 17
Independent Claim
18 words
A method according to any of Claims 6 to 13, wherein the substrate is subject to Knudsen flow.
Claim 18
Independent Claim
20 words
A method according to any of Claims 6 to 14 wherein the vapour pressure is from 10⁻¹ Pa to 10²Pa.
Claim 19
Dependent Claim
22 words
A substrate on which an aluminium nitride film has been formed by a method according to any of Claims 6 to 15.
Claim 20
Independent Claim
52 words
A method of forming a layer of aluminium nitride on a substrate, comprising heating the substrate to a compound-decomposition temperature and exposing it to a vapour of one or more compounds where R¹ and R² are independently ethyl or n-propyl, and R³ and R⁴ are independently hydrogen, sec-butyl, tertiary butyl or aryl.
Claim 21
Independent Claim
52 words
A method of forming a layer of aluminium nitride on a substrate, comprising heating the substrate to a compound-decomposition temperature and exposing it to a vapour of one or more compounds where R¹ and R² are independently ethyl or n-propyl, and R³ and R⁴ are independently hydrogen, sec-butyl, tertiary butyl or aryl.
Claim 22
Dependent Claim
16 words
A method according to Claim 17, wherein at least one of R¹ and R² is ethyl.
Claim 23
Independent Claim
18 words
A method according to Claims 18 or 19, wherein at least one of R³ and R⁴ is H.
Claim 24
Independent Claim
17 words
A method according to any preceding claim, wherein the compound is a polymer of the said formula.
Claim 25
Independent Claim
16 words
A method according to any preceding claim, wherein the vapour contains no other compounds containing aluminium.
Claim 26
Independent Claim
16 words
A method according to any preceding claim, wherein the vapour contains no other compounds containing nitrogen.
Claim 27
Independent Claim
17 words
A method according to any of Claims 17 to 20, wherein the vapour contains no other reactant.
Claim 28
Independent Claim
17 words
A method according to any of Claims 17 to 20, wherein the vapour contains substantially nothing else.
Claim 29
Independent Claim
20 words
A method according to any preceding claim, wherein the vapour is generated by heating the compound at 70°C to 150°C.
Claim 30
Independent Claim
20 words
A method according to any preceding claim, wherein the substrate is held at a temperature of from 500°C to 900°C.
Claim 31
Dependent Claim
14 words
A method according to Claim 26, wherein the substrate temperature is up to 800°C.
Claim 32
Independent Claim
15 words
A method according to any preceding claim, wherein the substrate is subject to Knudsen flow.
Claim 33
Independent Claim
17 words
A method according to any preceding claim, wherein the vapour pressure is from 10⁻¹ Pa to 10²Pa.
Claim 34
Dependent Claim
19 words
A substrate on which an aluminium nitride film has been formed by a method according to any preceding claim.
References Cited (Backward Citations)
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