Method for manufacturing a semiconductor device with a slotted metal test pad to prevent lift-off during wafer scribing

Claim 2

A process for fabricating a semiconductor device with features to aid in cutting metal within a scribe region of the device, comprising the steps of: providing a semiconductor wafer; forming a plurality of spaced apart semiconductor die on the semiconductor wafer, each die being separated from one another by one of a plurality of scribe regions; and forming a test structure in at least one of the scribe regions, the test structure having at least one metal probe pad, the metal probe pad having a plurality of slots oriented in a predetermined direction; and scribing the semiconductor wafer along the plurality of scribe regions and through the metal probe pad substantially parallel to the longitudinal axes of the slots to substantially prevent metal lift-off generated from the metal probe pad.

Claim 3

The process of claim 1 wherein the step of forming a test structure having at least one metal probe pad comprises forming a test structure having at least one metal probe pad which is an electrically continuous metal region.

Claim 4

The process of claim 1 wherein the step of forming a test structure comprises forming an electrical test structure.

Claim 5

The process of claim 1 wherein the step of scribing the semiconductor wafer comprises sawing the semiconductor wafer.

Claim 6

The process of claim 3 further comprising the step of electrically testing the test structure using the metal pad as a test contact point.

Claim 7

The process of claim 5 wherein the step of electrically testing the test structure comprises the step of electrically contacting the metal probe pad with a probe needle, and wherein the step of forming an electrical test structure comprises forming an electrical test structure having at least one metal probe pad, the metal probe pad being electrically continuous and having a plurality of slots, wherein the slots have a size which does not impede electrically contacting the metal probe pad with the probe needle.

Claim 8

A process for fabricating a semiconductor device with features to aid in cutting metal within a scribe region of the device, comprising the steps of: providing a semiconductor wafer; forming a plurality of spaced apart semiconductor die on the semiconductor wafer, the plurality of die being separated from one another by a plurality of horizontal scribe regions and a plurality of vertical scribe regions; forming an electrical test structure in at least one of the horizontal or vertical scribe regions, the test structure having at least one metal probe pad having a row of substantially rectangular slots, each slot having a longitudinal axis; and singulating the plurality of semiconductor die by cutting the semiconductor wafer through the horizontal and vertical scribe regions and through the metal probe pad in a direction substantially parallel to the longitudinal axes of the slots such that metal lift-off generation is prevented.

Claim 9

A process for fabricating a semiconductor device with features to aid in cutting metal within a scribe region of the device, comprising the steps of: providing a semiconductor wafer; forming a plurality of spaced apart semiconductor die on the semiconductor wafer, the plurality of die being separated from one another by a plurality of horizontal scribe regions and a plurality of vertical scribe regions; forming an electrical test structure in at least one of the horizontal or vertical scribe regions, the test structure having at least one metal probe pad having a row of substantially rectangular slots, each slot having a longitudinal axis; and singulating the plurality of semiconductor die by cutting the semiconductor wafer through the horizontal and vertical scribe regions and through the metal probe pad in a direction substantially parallel to the longitudinal axes of the slots such that metal lift-off generation is prevented.

Claim 10

The process of claim 7 wherein the step of singulating the plurality of semiconductor die comprises sawing the semiconductor wafer.

Claim 11

The process of claim 7 wherein the step of singulating the plurality of semiconductor die comprises singulating the plurality of semiconductor die such that a portion of the test structure is integral to one of the semiconductor die.

Claim 12

The process of claim 7 wherein the step of forming an electrical test structure comprises forming an electrical test structure having at least one slotted metal probe pad which is electrically continuous.

Claim 13

The process of claim 10 further comprising the step of electrically testing the test structure by electrically contacting the metal probe pad with a probe needle, prior to singulating the plurality of semiconductor die.

Claim 14

The process of claim 11 wherein the step of forming an electrical test structure comprises forming an electrical test structure having at least one slotted metal probe pad in which the slots have a size which does not impede electrically contacting the metal probe pad with the probe needle.