US4835592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor wafer with dice having briding metal structure and method of manufacturing same
Assignee: IXYS LLC
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Filing: 1988-04-28
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Granted: 1989-05-30
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Expires: 2008-04-28
Abstract
Abstract A monolithic semiconductor device and method of manufacturing same having improved high voltage performance. When the device is in wafer form, a metallization structure is formed over scribe zones which are disposed along the scribe lines which define the edge of each device. The scribe zones are normally not covered with oxide during conventional semiconductor fabrication so that an ohmic contact is formed with semiconductor body. The metal structure includes a peripheral section which extend around the active region of each device and extension sections which extend across the scribe lines and interconnect the peripheral sections. The metal structure clamps the voltage at the edge of each device, both prior and subsequent to wafer breaking, which prevents as depletion region created by a reverse-biased junction from extending to the edge of the device under high voltage conditions. As a result, high voltage performance is improved.
Inventors
- 👤 Nathan Zommer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:01
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
103 words
A semiconductor die comprising: a semiconductor body of selected conductivity having an upper surface which includes at least one active region, the body having a peripheral edge; a contact region of greater conductivity than the selected conductivity, the contact region surrounding the semiconductor body and extending into the semiconductor body from the upper surface and extending to the peripheral edge in at least one region; and an electrically conductive metal structure disposed on the upper surface on the contact region, the electrically conductive metal structure extending to the peripheral edge in the at least one region and extending completely around the semiconductor body.
Claim 2
Dependent Claim
103 words
A semiconductor die comprising: a semiconductor body of selected conductivity having an upper surface which includes at least one active region, the body having a peripheral edge; a contact region of greater conductivity than the selected conductivity, the contact region surrounding the semiconductor body and extending into the semiconductor body from the upper surface and extending to the peripheral edge in at least one region; and an electrically conductive metal structure disposed on the upper surface on the contact region, the electrically conductive metal structure extending to the peripheral edge in the at least one region and extending completely around the semiconductor body.
Claim 3
Dependent Claim
22 words
A semiconductor die as in claim 1 wherein the electrically conductive metal structure comprises four interconnected strips forming a generally rectangular pattern.
Claim 4
Dependent Claim
20 words
A semiconductor die as in claim 2 wherein the strips are displaced from the peripheral edge of the semiconductor body.
Claim 5
Dependent Claim
38 words
A semiconductor die as in claim 3 wherein the electrically conductive metal structure includes a plurality of extension sections, each one of which extends to the peripheral edge of the semiconductor body at spaced-apart locations along the edge.
Claim 6
Dependent Claim
38 words
A semiconductor die as in claim 4 wherein the upper surface is generally rectangular and the plurality of extension sections includes at least one extension section extending from the electrically conductive metal structure to each of the edges.
Claim 7
Dependent Claim
34 words
A semiconductor die as in claim 2 wherein the interconnected strips intersect to form four corners and an extension section extends from each of the corners to the peripheral edge of the semiconductor body.
Claim 8
Dependent Claim
20 words
A semiconductor die as in claim 1 wherein the electrically conductive metal structure is ohmically connected to the contact region.
Claim 9
Dependent Claim
100 words
A semiconductor wafer comprising: a plurality of integrated circuits formed in the wafer, each circuit including a central portion and a periphery, the periphery of each circuit being separated on the wafer from every other circuit so as to define scribe lines therebetween; a contact region of greater conductivity than the wafer, the contact region extending into the wafer beneath the scribe lines, and not extending into the central portion; and an electrically conductive structure disposed on the contact region and not on the central portion, and extending to the scribe lines in at least one location on each circuit.
Claim 10
Dependent Claim
100 words
A semiconductor wafer comprising: a plurality of integrated circuits formed in the wafer, each circuit including a central portion and a periphery, the periphery of each circuit being separated on the wafer from every other circuit so as to define scribe lines therebetween; a contact region of greater conductivity than the wafer, the contact region extending into the wafer beneath the scribe lines, and not extending into the central portion; and an electrically conductive structure disposed on the contact region and not on the central portion, and extending to the scribe lines in at least one location on each circuit.
Claim 11
Dependent Claim
33 words
A wafer as in claim 8 wherein the electrically conductive structure only intermittently extends to the scribe lines yet forms a continuous boundary around the central portion of each of the integrated circuits.
Claim 12
Dependent Claim
18 words
A wafer as in claim 8 wherein the electrically conductive structure is ohmically connected to the contact region.
Claim 13
Dependent Claim
21 words
A wafer as in claim 10 wherein each of the circuits is rectangular and the scribe lines form an orthogonal pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |