Metalorganic chemical vapor deposition of superconducting films

Claim 1

A process for forming a superconducting film on a substrate using chemical vapor deposition wherein the superconducting film exhibits a zero resistance at a temperature of at least 80° K., said process comprising the steps of: (a) heating said substrate upon which said superconducting film is to be formed; (b) providing the following source materials: (1) one of the compounds Ba(DPM) 2 ·(THF).sub.η or Ba(DPM) 2 ·(DMF).sub.η, (2) one of the compounds Cu(DPM) 2 ·(THF).sub.η or Cu(DPM) 2 ·(DMF).sub.η, and (3) one of the compounds M(DPM) 3 ·(THF).sub.η or M(DPM) 3 ·(DMF).sub.η, where DPM is 2, 2, 6, 6-tetramethyl-3,5-heptaneodianate represented by the chemical formula CH.sub.3 c(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3 where THF is tetrahydrofuran represented by the chemical formula: ##STR5## where DMF is dimethylformamide represented by the chemical formula CHON(CH 3 ) 2 where M is an element chosen from the list: Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb or Lu, and where n is any integer; (c) gasifying said source materials to form first gases; (d) introducing said first gases into a growth tank; and (e) simultaneously introducing at least one of the following second gases O 2 , O 3 , or N 2 O to said tank whereby an oxide superconducting film is formed on said substrate located in said growth tank.