US5180682A
Expired / Lapsed
US
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Semiconductor device and method of producing semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1991-05-28
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Granted: 1993-01-19
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Expires: 2011-05-28
Abstract
Abstract A semiconductor device composed of: a semiconductor substrate of a first conductivity type having a first impurity concentration; a belt-shaped impurity layer of the first conductivity type which is formed in the substrate so as to be spaced apart from a surface of the substrate and which has a second impurity concentration which is higher than the first concentration at a first depth from the surface of the substrate; a gate electrode formed on the substrate via a first insulating film; a second impurity layer of a second conductive type which is formed in the substrate on both sides of the gate electrode such as to be spaced apart from each other and has a third impurity concentration at a second depth from the surface of the semiconductor substrate, whose lower surface abuts against the first impurity layer or is present thereabove, the second impurity layer having a configuration projecting downward of the gate electrode at a portion thereof adjacent to the first impurity layer; side wall insulating films each formed on a side wall of the gate electrode; and a third impurity layer of the second conductivity type which is formed in the second impurity layer laterally of the side wall insulating film and has a fourth concentration higher than the third concentration.
Inventors
- 👤 Masahiro Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:10
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D30/00; H10D30/60; H10D30/601; H10D30/605; Y; Y10; Y10S; Y10S148/00; Y10S148/082
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
162 words
A method of producing a semiconductor device comprising the steps of: forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type; ion-implanting first impurities of said first conductivity type into said semiconductor substrate to create a first impurity concentration having a peak; forming a gate electrode on said first insulating film; ion-implanting second impurities of a second conductivity type opposite to said first conductivity type of said semiconductor substrate into said semiconductor substrate to create a second impurity concentration having a peak, with said gate electrode serving as a mask, in such a manner that the peak of the concentration of said second impurities is at a shallower depth than the peak of the concentration of said first impurities; forming a side wall insulating film on said gate electrode; and ion-implanting third impurities of said second conductivity type into said semiconductor substrate with said gate electrode and said side wall insulating film serving as masks.
Claim 2
Independent Claim
162 words
A method of producing a semiconductor device comprising the steps of: forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type; ion-implanting first impurities of said first conductivity type into said semiconductor substrate to create a first impurity concentration having a peak; forming a gate electrode on said first insulating film; ion-implanting second impurities of a second conductivity type opposite to said first conductivity type of said semiconductor substrate into said semiconductor substrate to create a second impurity concentration having a peak, with said gate electrode serving as a mask, in such a manner that the peak of the concentration of said second impurities is at a shallower depth than the peak of the concentration of said first impurities; forming a side wall insulating film on said gate electrode; and ion-implanting third impurities of said second conductivity type into said semiconductor substrate with said gate electrode and said side wall insulating film serving as masks.
Claim 3
Dependent Claim
40 words
A method of producing a semiconductor device according to claim 1 wherein said side wall insulating film is formed by depositing a second insulating film on said semiconductor substrate and said gate electrode; and anisotropically ion-etching the second insulating film.
Claim 4
Dependent Claim
33 words
A method of producing a semiconductor device according to claim 2 wherein the first impurity concentration peak is at a depth from the surface of the semiconductor substrate of 0.2 to 0.7 μm.
Claim 5
Dependent Claim
35 words
A method producing a semiconductor device according to claim 3 wherein the peak concentration of said first impurities in said semiconductor substrate is in the range of 1×10 16 to 3×10 18 cm -3 .
Claim 6
Dependent Claim
33 words
A method of producing a semiconductor device according to claim 1 wherein the first impurity concentration peak is at a depth from the surface of the semiconductor substrate of 0.2 to 0.7 μm.
Claim 7
Dependent Claim
35 words
A method producing a semiconductor device according to claim 5 wherein the peak concentration of said first impurities in said semiconductor substrate is in the range of 1×10 16 to 3×10 18 cm -3 .
Claim 8
Dependent Claim
35 words
A method producing a semiconductor device according to claim 2 wherein the peak concentration of said first impurities in said semiconductor substrate is in the range of 1×10 16 to 3×10 18 cm -3 .
Claim 9
Dependent Claim
35 words
A method producing a semiconductor device according to claim 1 wherein the peak concentration of said first impurities in said semiconductor substrate is in the range of 1×10 16 to 3×10 18 cm -3 .
Claim 10
Dependent Claim
33 words
A method of producing a semiconductor device according to claim 8 wherein the second impurity concentration peak is at a depth from the surface of said semiconductor substrate of 0.05 to 0.25 μm.
Claim 11
Dependent Claim
36 words
A method of producing a semiconductor device according to claim 9 wherein the peak concentration of said second impurities in said semiconductor substrate is in the range of 1×10 16 to 6×10 18 cm -3 .
Claim 12
Dependent Claim
33 words
A method of producing a semiconductor device according to claim 2 wherein the second impurity concentration peak is at a depth from the surface of said semiconductor substrate of 0.05 to 0.25 μm.
Claim 13
Dependent Claim
36 words
A method of producing a semiconductor device according to claim 11 wherein the peak concentration of said second impurities in said semiconductor substrate is in the range of 1×10 16 to 6×10 18 cm -3 .
Claim 14
Dependent Claim
33 words
A method of producing a semiconductor device according to claim 1 wherein the second impurity concentration peak is at a depth from the surface of said semiconductor substrate of 0.05 to 0.25 μm.
Claim 15
Dependent Claim
36 words
A method of producing a semiconductor device according to claim 1 wherein the peak concentration of said second impurities in said semiconductor substrate is in the range of 1×10 16 to 6×10 18 cm -3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-19 | 1996-07-20 | 1997-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-19 | 2000-07-20 | 2001-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-19 | 2004-07-20 | 2005-01-19 | $7700.00 | Window Closed / Lapsed |