← Back to Patent Explorer
US5176982A Expired / Lapsed US ⏱️ 0.0 years remaining

Photosensitive resin composition for forming a polyimide film pattern

Assignee: Toshiba Corp
•
Filing: 1991-07-05
•
Granted: 1993-01-05
•
Expires: 2011-07-05
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Disclosed is a photosensitive resin composition for forming a polyimide film pattern. The composition contains a polyamic acid and at least one silyl ketone compound represented by general formula (II) given below, ##STR1## where each of R 3 to R 16 is a are substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, each of R 5 to R 16 may be a substituted or unsubstituted silyl group, and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1. The composition further contains a sensitizer, as required. A semiconductor substrate is coated with the composition, followed by exposing the coating through a predetermined mask and subsequently developing and heat-treating the coating so as to form a polyimide film pattern.

Inventors

  • 👤 Yukihiro Mikogami
  • 👤 Shuzi Hayase
  • 👤 Yoshihiko Nakano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 10:45
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; C; C08; C08G; C08G73/00; C08G73/06; C08G73/10; C08G73/1057; C08G73/106; C08G77/00; C08G77/42; C08G77/452; C08G77/455; C08K; C08K5/00; C08K5/54; C08K5/541; G03F7/0754; H; H10; H10P; H10P76/00; Y; Y10; Y10S; Y10S522/00; Y10S522/904; Y10S522/905

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 151 words
A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I) and at least one silyl ketone compound represented by general formula (II): ##STR46## where, R 1 is substituted or unsubstituted ##STR47## R 2 is a divalent organic rinking group; each of R 3 and R 4 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5 to R 16 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.
Claim 2
Dependent Claim 151 words
A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I) and at least one silyl ketone compound represented by general formula (II): ##STR46## where, R 1 is substituted or unsubstituted ##STR47## R 2 is a divalent organic rinking group; each of R 3 and R 4 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5 to R 16 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.
Claim 3
Dependent Claim 83 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a monoamine represented by general formula (III), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR48## where, R 1 is a substituted or unsubstituted ##STR49## R 2 is a divalent organic rinking group; and A is a monovalent organic group.
Claim 4
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 2, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound.
Claim 5
Dependent Claim 84 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a dicarboxylic anhydride represented by general formula (IV), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR50## where, R 1 is a substituted or unsubstituted ##STR51## R 2 is a divalent organic rinking group; and B is a divalent organic group.
Claim 6
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 3, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound.
Claim 7
Dependent Claim 50 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a copolymer synthesized by a polycondensation reaction among maleic anhydride, pyromellitic dianhydride, 3,3',4,4'-benzophenon tetracarboxylic dianhydride, 4,4'-diamino diphenyl ether, and bis (γ-aminopropyl) tetramethyl disiloxane.
Claim 8
Dependent Claim 45 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the silyl ketone compound represented by general formula (II) is at least one compound selected from the group consisting of (SK-2), (SK-4), (SK-5), (SK-6), (SK-11), and (SK-13) given below: ##STR52##
Claim 9
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the silyl ketone compound represented by general formula (II) is used in an amount of 5 to 60 parts by weight based on 100 parts by weight of the polyamic acid.
Claim 10
Dependent Claim 157 words
A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I); at least one kind of a silyl ketone compound represented by general formula (II); and a sensitizer: ##STR53## where, R 1 is a substituted or unsubstituted ##STR54## R 2 is a divalent organic rinking group; each of R 3 and R 4 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted o unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5 to R 16 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.
Claim 11
Dependent Claim 157 words
A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I); at least one kind of a silyl ketone compound represented by general formula (II); and a sensitizer: ##STR53## where, R 1 is a substituted or unsubstituted ##STR54## R 2 is a divalent organic rinking group; each of R 3 and R 4 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted o unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5 to R 16 is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.
Claim 12
Dependent Claim 84 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a monoamine represented by the general formula (III), a tetracarboxylic anhyride represented by the formula (V), and a diamine represented by general formula (VI): ##STR55## where, R 1 is a substituted or unsubstituted ##STR56## R 2 is a divalent organic rinking group; and A is a monovalent organic group.
Claim 13
Dependent Claim 45 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 10, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula is an aromatic diamine and/or a siloxane compound.
Claim 14
Dependent Claim 83 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a dicarboxylic anhydride represented by general formula (IV), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR57## where, R 1 is a substituted or unsubstituted ##STR58## R 2 is a divalent organic radical; and B is a divalent organic group.
Claim 15
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 12, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound.
Claim 16
Dependent Claim 50 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a copolymer synthesized by a polycondensation reaction among maleic anhydride, pyromellitic dianhydride, 3,3',4,4'-benzophenon tetracarboxylic dianhydride, 4,4'-diamino diphenyl ether, and bis (γ-aminopropyl) tetramethyl disiloxane.
Claim 17
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the silyl ketone compound represented by general formula (II) is at least one compound selected from the group consisting of (SK-2), (SK-4), (SK-5), (SK 6), (SK-11), and (SK-13) given below: ##STR59##
Claim 18
Dependent Claim 46 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the silyl ketone compound represented by general formula (II) is used in an amount of 5 to 60 parts by weight based on 100 parts by weight of the polyamic acid.
Claim 19
Dependent Claim 38 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is at least one compound selected from the group consisting of benzophenone series compounds, thioxanthone series compounds and phenothiazine series compounds.
Claim 20
Dependent Claim 36 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is at least one compound selected from the group consisting of (SE-7), (SE-12), (SE-13) and (SE-14) given below: ##STR60##
Claim 21
Dependent Claim 41 words
The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is used in an amount of 0.001 to 20% by weight based on the amount of the polyamic acid and the silyl ketone compound.

References Cited (Backward Citations)

US4321319A Cited
US4406764A Cited
US4437959A Cited
US4599155A Cited
US4698295A Cited
US4898806A Cited
JPS62181285A Cited
US4865949A Cited
JPH0259752A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-01-05 1996-07-06 1997-01-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-01-05 2000-07-06 2001-01-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-01-05 2004-07-06 2005-01-05 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag