Patent US5176789A successfully refreshed from Google Patents.
US5176789A
Expired / Lapsed
US
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Method for depositing material on depressions
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-14
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Granted: 1993-01-05
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Expires: 2010-08-14
Abstract
Abstract An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Takashi Inujima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:49
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/48; C23C16/482; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
77 words
A method of forming a depression structure including: etching a semiconductor substrate by use of a mask in order to form a depression; forming a film on the inside surface of the depression by a CVD method using light irradiation; and removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression.
Claim 2
Independent Claim
77 words
A method of forming a depression structure including: etching a semiconductor substrate by use of a mask in order to form a depression; forming a film on the inside surface of the depression by a CVD method using light irradiation; and removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said film is a silicon nitride film.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein the depth of the depression is greater than the width thereof.
Claim 5
Independent Claim
71 words
A method of forming a depression structure comprising the steps of: forming a depression in a semiconductor substrate; forming a mask for use in etching on at least some portion of the side surface of said depression so that said substrate is exposed at the bottom of said depression, wherein said mask forming step is carried out by a CVD method using light irradiation; and removing said mask after the etching.
Claim 6
Independent Claim
71 words
A method of forming a depression structure comprising the steps of: forming a depression in a semiconductor substrate; forming a mask for use in etching on at least some portion of the side surface of said depression so that said substrate is exposed at the bottom of said depression, wherein said mask forming step is carried out by a CVD method using light irradiation; and removing said mask after the etching.
Claim 7
Dependent Claim
13 words
The method of claim 4 wherein said mask is a silicon nitride film.
Claim 8
Independent Claim
105 words
A method of forming a depression structure comprising the steps of: etching a semiconductor substrate by use of a mask in order to form a depression therein; forming a film on the inside surface of said depression; removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression; anisotropically etching the bottom of said substrate in a direction substantially parallel with the surface of said substrate to form a cavity in said substrate; and removing said some of the film.
Claim 9
Independent Claim
105 words
A method of forming a depression structure comprising the steps of: etching a semiconductor substrate by use of a mask in order to form a depression therein; forming a film on the inside surface of said depression; removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression; anisotropically etching the bottom of said substrate in a direction substantially parallel with the surface of said substrate to form a cavity in said substrate; and removing said some of the film.
Claim 10
Dependent Claim
19 words
The method of claim 6 wherein said forming step is carried out by a CVD method using light irradiation.
Claim 11
Dependent Claim
13 words
The method of claim 6 wherein said film is a silicon nitride film.
Claim 12
Independent Claim
59 words
A method of forming a depression structure comprising the steps of: forming a depression in a semiconductor substrate; forming a mask for use in anisotropic etching on at least some portion of the side surface of the said depression so that said substrate is exposed at the bottom of said depression; and removing said mask after the anisotropic etching.
Claim 13
Independent Claim
59 words
A method of forming a depression structure comprising the steps of: forming a depression in a semiconductor substrate; forming a mask for use in anisotropic etching on at least some portion of the side surface of the said depression so that said substrate is exposed at the bottom of said depression; and removing said mask after the anisotropic etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-05 | 1996-07-06 | 1997-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-05 | 2000-07-06 | 2001-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-05 | 2004-07-06 | 2005-01-05 | $7700.00 | Window Closed / Lapsed |