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Patent US5173474A successfully refreshed from Google Patents.
US5173474A
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Silicon substrate having an epitaxial superconducting layer thereon and method of making same
Assignee: PRESIDENT AND BOARD OF TRUSTEES OF SANTA CLARA COLLEGE
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Filing: 1991-03-11
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Granted: 1992-12-22
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Expires: 2011-03-11
Abstract
Abstract An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85° K., a transition width (10-90%) of no more than 1.0° K., a resistivity at 300° K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300° K./100° K.) of 3.0±0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.
Inventors
- 👤 George A. N. Connell
- 👤 David B. Fenner
- 👤 James B. Boyce
- 👤 David K. Fork
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:54
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/725; Y10S505/729; Y10S505/73; Y10S505/731; Y10S505/732; Y10S505/734
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
138 words
A method of forming a high temperature superconducting layer on a silicon substrate comprising the steps of a) providing a monocrystalline silicon substrate having a major surface, b) cleaning said major surface using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element which does not react with silicon so as to disrupt the surface crystallinity, c) heating said substrate in a deposition chamber to evaporate said element, d) depositing a buffer layer of YSZ on said major surface while said substrate remains in said deposition chamber, said YSZ forming epitaxially on said major surface of monocrystalline silicon, and e) depositing a high temperature superconducting material on said buffer layer while said substrate remains in said deposition chamber, said high temperature superconductor material forming epitaxially on said buffer layer of YSZ.
Claim 2
Independent Claim
138 words
A method of forming a high temperature superconducting layer on a silicon substrate comprising the steps of a) providing a monocrystalline silicon substrate having a major surface, b) cleaning said major surface using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element which does not react with silicon so as to disrupt the surface crystallinity, c) heating said substrate in a deposition chamber to evaporate said element, d) depositing a buffer layer of YSZ on said major surface while said substrate remains in said deposition chamber, said YSZ forming epitaxially on said major surface of monocrystalline silicon, and e) depositing a high temperature superconducting material on said buffer layer while said substrate remains in said deposition chamber, said high temperature superconductor material forming epitaxially on said buffer layer of YSZ.
Claim 3
Dependent Claim
32 words
The method as defined by claim 1 wherein said YSZ forms epitaxially with the in-plane (100) direction of said YSZ layer being parallel to the in-plane (100) direction of said monocrystalline silicon.
Claim 4
Dependent Claim
12 words
The method as defined by claim 1 wherein said element is hydrogen.
Claim 5
Dependent Claim
26 words
The method as defined by claim 3 wherein step c) includes heating said substrate to approximately 800° C. in a vacuum of approximately 10 -6 Torr.
Claim 6
Dependent Claim
34 words
The method as defined by claim 4 wherein step c) further includes heating said substrate to approximately 250° C. to remove weakly bound adsorbed impurities prior to heating said substrate to approximately 800° C.
Claim 7
Dependent Claim
29 words
The method as defined by claim 5 wherein step d) includes initially depositing YSZ in said vacuum of approximately 10 -6 Torr and then introducing oxygen into said chamber.
Claim 8
Dependent Claim
21 words
The method as defined by claim 6 wherein the introduction of oxygen is at a pressure of approximately 5×10 -4 Torr.
Claim 9
Dependent Claim
32 words
The method as defined by claim 7 wherein said major surface of silicon has a 1-0-0 crystallographic orientation, and said step of depositing a buffer layer forms YSZ having a cubic structure.
Claim 10
Dependent Claim
13 words
The method as defined by claim 8 wherein step d) includes laser ablation.
Claim 11
Dependent Claim
12 words
The method as defined by claim 8 wherein step d) includes sputtering.
Claim 12
Dependent Claim
14 words
The method as defined by claim 8 wherein step d) includes chemical vapor deposition.
Claim 13
Dependent Claim
14 words
The method as defined by claim 8 wherein step d) includes molecular beam epitaxy.
Claim 14
Dependent Claim
13 words
The method as defined by claim 8 wherein step d) includes e-beam epitaxy.
Claim 15
Dependent Claim
13 words
The method as defined by claim 8 wherein step d) includes thermal evaporation.
Claim 16
Dependent Claim
38 words
The method as defined by claim 8 wherein step e) includes reducing the temperature of said silicon substrate to approximately 750° C., increasing oxygen pressure to approximately 200 milli Torr, and then depositing YBCO high temperature superconducting material.
Claim 17
Dependent Claim
20 words
The method as defined by claim 8 wherein the in-plane YBCO(100) direction is parallel to the in-plane silicon (110) direction.
Claim 18
Dependent Claim
13 words
The method as defined by claim 15 wherein step e) includes laser ablation.
Claim 19
Dependent Claim
12 words
The method as defined by claim 15 wherein step e) includes sputtering.
Claim 20
Dependent Claim
14 words
The method as defined by claim 15 wherein step d) includes chemical vapor deposition.
Claim 21
Dependent Claim
14 words
The method as defined by claim 15 wherein step d) includes molecular beam epitaxy.
Claim 22
Dependent Claim
13 words
The method as defined by claim 15 wherein step d) includes e-beam epitaxy.
Claim 23
Dependent Claim
13 words
The method as defined by claim 15 wherein step d) includes thermal evaporation.
Claim 24
Dependent Claim
34 words
The method as defined by claim 15 and further including following step e) the steps of filling said chamber with 200-500 Torr of oxygen and then cooling said silicon substrate at a controlled rate.
Claim 25
Dependent Claim
34 words
The method as defined by claim 23 wherein step c) further includes heating said substrate to approximately 250° C. to remove weakly bound adsorbed impurities prior to heating said substrate to approximately 800° C.
Claim 26
Dependent Claim
36 words
The method as defined by claim 1 wherein said silicon substrate is an integrated circuit and further including the steps of selectively etching said high temperature superconducting material to form an interconnect for said integrated circuit.
Claim 27
Dependent Claim
47 words
The method as defined by claim 1 wherein said silicon substrate is an integrated circuit and further including the steps of selectively etching said high-temperature superconducting material to form an array of superconducting devices such as bolometric infrared detectors connected with and controlled by said integrated circuit.
Claim 28
Dependent Claim
12 words
The method as defined by claim 1 wherein step d) includes sputtering.
Claim 29
Dependent Claim
14 words
The method as defined by claim 1 wherein step d) includes chemical vapor deposition.
Claim 30
Dependent Claim
14 words
The method as defined by claim 1 wherein step d) includes molecular beam epitaxy.
Claim 31
Dependent Claim
13 words
The method as defined by claim 1 wherein step d) includes e-beam epitaxy.
Claim 32
Dependent Claim
13 words
The method as defined by claim 1 wherein step d) includes thermal evaporation.
Claim 33
Dependent Claim
57 words
The method as defined by claim 1 wherein said high temperature superconducting material has a zero resistance transition temperature of at least 85° K. and a transition width (10-90%) of no more than 1.0° K. and a resistivity at 300° K. of no more than 300 micro-ohm-centimeter and a resistivity ratio (at 300° K./100° K.) of 3.0±0.2.
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