US5173443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacture of optically transparent electrically conductive semiconductor windows
Assignee: Northrop Grumman Corp
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Filing: 1990-06-27
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Granted: 1992-12-22
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Expires: 2010-06-27
Abstract
Abstract Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
Inventors
- 👤 V. Warren Biricik
- 👤 James M. Rowe
- 👤 Paul Kraatz
- 👤 John W. Tully
- 👤 Wesley J. Thompson
- 👤 Rudolph W. Modster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:35
CPC Classifications
G; G02; G02B; G02B1/00; G02B1/10; G02B1/02; G02B1/16; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/058; Y10S148/08; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
148 words
A method for making a conductive infrared transparent window comprising the steps of: providing an infrared transparent substrate of germanium, forming an inherent layer of infrared transparent germanium from 1-50 microns thick at one surface of said substrate, diffusing an n type impurity dopant selected from the group consisting of phosphorus, arsenic, and antimony into said layer for rendering the layer electrically conductive with a sheet resistance of less than 100 ohms per square, while maintaining a sufficient mobility to retain the infrared transparency thereof at a value greater than about 55% of optical transmittance over the infrared range, while further maintaining the remaining substrate undoped so that said doped layer becomes, upon doping, a distinctly different material from the material of said undoped substrate, said layer being formed as a crystalline layer with a low density of micro-structural defects to thereby essentially maintain the infrared transparency thereof.
Claim 2
Independent Claim
148 words
A method for making a conductive infrared transparent window comprising the steps of: providing an infrared transparent substrate of germanium, forming an inherent layer of infrared transparent germanium from 1-50 microns thick at one surface of said substrate, diffusing an n type impurity dopant selected from the group consisting of phosphorus, arsenic, and antimony into said layer for rendering the layer electrically conductive with a sheet resistance of less than 100 ohms per square, while maintaining a sufficient mobility to retain the infrared transparency thereof at a value greater than about 55% of optical transmittance over the infrared range, while further maintaining the remaining substrate undoped so that said doped layer becomes, upon doping, a distinctly different material from the material of said undoped substrate, said layer being formed as a crystalline layer with a low density of micro-structural defects to thereby essentially maintain the infrared transparency thereof.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein said dopant is added to said layer is at a level such that said infrared transparent conductive window achieves an electrical surface sheet resistance of less than 30 ohms per square.
Claim 4
Dependent Claim
35 words
The method of claim 1 further including depositing a plurality of coatings over said layer having said dopant therein and over the opposite surface of the window substrate to provide anti-reflection properties to said surfaces.
Claim 5
Dependent Claim
42 words
The method of claim 1 wherein the dopant is deposited on the surface of the semiconductor substrate by heating the substrate to a temperature of greater than 600° C. and carrying the dopant to the substrate surface on an inert gas carrier.
Claim 6
Dependent Claim
37 words
The method of claim 1 wherein said dopant is deposited on the surface of said semiconductor substrate and subsequent to said deposition a protective/encapsulant layer is deposited over said dopant or surface using high vacuum deposition processes.
Claim 7
Dependent Claim
60 words
The method of claim 1 wherein said dopant is antimony, the antimony first being deposited on the surface of the substrate, sealed with a silicon monoxide protective/encapsulant layer and then diffused into said surface by heating the substrate in a furnace having a reducing gas atmosphere at a temperature of 600°-900° C. for a period of 4 to 24 hours.
Claim 8
Independent Claim
151 words
A method for making a conductive infrared transparent window comprising the steps of: providing an infrared transparent substrate of germanium, forming an added layer of infrared transparent germanium from 1-50 microns thick at one surface of said substrate by epitaxially growing a coating thereon, co-depositing an n type impurity dopant selected from the group of phosphorus, arsenic, and antimony while growing said coating for rendering the layer electrically conductive with a sheet resistance of less than 100 ohms per square to render said layer conductive, while maintaining a sufficient mobility to retain the infrared transparency of said layer at a value greater than about 55% of optical transmittance over the infrared range, said layer becoming, upon doping, a distinctly different material from said substrate which is left undoped, said layer being formed as a crystalline layer with a low density of micro-structural defects to thereby essentially maintain the infrared transparency thereof.
Claim 9
Independent Claim
151 words
A method for making a conductive infrared transparent window comprising the steps of: providing an infrared transparent substrate of germanium, forming an added layer of infrared transparent germanium from 1-50 microns thick at one surface of said substrate by epitaxially growing a coating thereon, co-depositing an n type impurity dopant selected from the group of phosphorus, arsenic, and antimony while growing said coating for rendering the layer electrically conductive with a sheet resistance of less than 100 ohms per square to render said layer conductive, while maintaining a sufficient mobility to retain the infrared transparency of said layer at a value greater than about 55% of optical transmittance over the infrared range, said layer becoming, upon doping, a distinctly different material from said substrate which is left undoped, said layer being formed as a crystalline layer with a low density of micro-structural defects to thereby essentially maintain the infrared transparency thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-22 | 1996-06-22 | 1996-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-22 | 2000-06-22 | 2000-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-22 | 2004-06-22 | 2004-12-22 | $7700.00 | Window Closed / Lapsed |